|
|
PDF IRF630 Data sheet ( Hoja de datos )
| Número de pieza | IRF630 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | TRANSYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF630 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
|
No Preview Available !
IRF630
Power MOSFET
VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A
Drain
D
Gate Drain Source
N
Channel
G
S
Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
V(BR)DSS VGS = 0 VDC, ID = 250µA
IDSS
VDS = 200VDC, VGS = 0VDC
VDS = 160VDC, VGS = 0VDC Tj=125 C
IGSS
VGS(th)
VGS = +20VDC
VGS = -20VDC
VDS = VGS, ID = 250µA
Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 3.1A
Gate Charge
Gate to Source Charge
Gate to Drain Charge
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn On Delay Time
Turn Off Delay Time
Rise Time
Fall Time
Continuous Source Current
Pulsed Source Current
Forward Voltage (Diode)
QG
QGS
QGD
CISS
COSS
CRSS
td(on)
td(off)
tr
ID = 5.9A
VDS = 160VDC,
VGS = 10VDC
VDS = 25VDC, VGS= 0VDC, f = 1.0MHZ
VDD = 100VDC, ID = 5.9A, RG = 12
RD = 16
tf
IS
ISM
VSD VGS = 0VDC, IS =9.0A, Tp = 300µS
Value
Min Typ
200 -
--
--
--
--
2.0 -
--
--
--
--
- 800
- 240
- 76
- 9.4
- 39
- 28
- 20
--
--
--
Max Unit
- Volt
25
250 µA
100
-100
4.0
nA
nA
Volt
0.40
43 nC
7.0 nC
23 nC
- pF
- pF
- pF
- nS
- nS
- nS
- nS
9.0 A
36 A
2.0 V
MAXIMUM RATINGS (Tj = 25 C unless stated otherwise)
Parameter
Symbol Condition
Value
Gate to Source Voltage
VGS
+/- 20V
Drain to Source
Voltage
Continuous Drain Current
VDSS
ID
200
9.0
Pulsed Drain Current
Total Power Dissapation
Thermal Resistance
(Junction to Ambient)
IDM
PD (TA = 25 C)
RTH (J-A)
36
74
62
Maximum Operating Temperature Range (Tj) -55 to +150 OC
Maximum Storage Temperature Range (Tstg) -55 to +150 OC
Unit
Volt
Volt
Amp
Amp
W
C/W
Mechanical Dimensions
DIMENSIONS
Millimetres
Inches
Dim Min Max Min Max
a 10.29 10.54 0.405 0.415
b 2.62 2.87 0.103 0.113
c 6.10 6.47 0.240 0.255
d 3.54 3.78 0.139 0.149
e 14.84 15.24 0.584 0.600
f 13.47 14.09 0.530 0.555
g 1.15
0.045
h 1.15 1.400 0.045 0.055
j 2.54 0.100
k 3.550 4.06 0.140 0.160
m 4.20 4.69 0.165 0.185
n 1.22 1.32 0.048 0.052
p 2.64 2.92
q 0.48 0.55
r 0.69 0.93
0.104
0.018
0.027
0.115
0.022
0.037
a
d
cb
4
eg
k 12 3
h
f
r
Case TO-220-AB
Plastic
j
j
m
n
1 - Gate
2 & 4 - Drain
3 - Source
q
p
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet IRF630.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF630 | 200V/9A POWER MOSFET |  TAITRON |
| IRF630 | N-channel TrenchMOS transistor |  NXP Semiconductors |
| IRF630 | N-CHANNEL MOSFET |  STMicroelectronics |
| IRF630 | 9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs |  Intersil Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |