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2N5038
2N5039
SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5038 and 2N5039
are silicon NPN power transistors designed for power
amplifier and power oscillator applications where high
current, high voltage, and fast switching speeds are
required.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEX
VCER
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N5038
150
2N5039
120
150 120
110 95
90 75
7.0
20
30
5.0
140
-65 to +200
1.25
UNITS
V
V
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5038
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
ICEV
ICEV
ICEV
ICEO
ICEO
IEBO
IEBO
BVCEX
BVCER
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hFE
VCE=140V, VBE=1.5V
VCE=110V, VBE=1.5V
VCE=100V, VBE=1.5V, TC=150°C
VCE=85V, VBE=1.5V, TC=150°C
VCE=70V
VCE=55V
VEB=5.0V
VEB=7.0V
IC=200mA, VBE=1.5V
IC=200mA, RBE≤50Ω
IC=200mA
IE=50mA
IC=12A, IB=1.2A
IC=10A, IB=1.0A
IC=20A, IB=5.0A
IC=20A, IB=5.0A
VCE=5.0V, IC=12A
VCE=5.0V, IC=10A
VCE=5.0V, IC=2.0A
VCE=5.0V, IC=10A
VCE=5.0V, IC=12A
- 50
--
- 10
--
- 20
--
- 5.0
- 50
150 -
110 -
90 -
7.0 -
- 1.0
--
- 2.5
- 3.3
- 1.8
--
50 250
--
20 100
2N5039
MIN MAX
--
- 50
--
- 10
--
- 20
- 15
- 50
120 -
95 -
75 -
7.0 -
--
- 1.0
- 2.5
- 3.3
--
- 1.8
30 250
20 100
--
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
R1 (17-March 2015)