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PDF 2N5630 Data sheet ( Hoja de datos )
| Número de pieza | 2N5630 | |
| Descripción | Power Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N5630 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N5630/D
High-Voltage Ċ High Power
Transistors
. . . designed for use in high power audio amplifier applications and high voltage
switching regulator circuits.
• High Collector Emitter Sustaining Voltage —
VCEO(sus) = 120 Vdc — 2N5630, 2N6030
VCEO(sus) = 140 Vdc — 2N5631, 2N6031
• High DC Current Gain — @ IC = 8.0 Adc
hFE = 20 (Min) — 2N5630, 2N6030
hFE = 15 (Min) — 2N5631, 2N6031
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Low Collector–Emitter Saturation Voltage —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
2N5630
2N6030
2N5631
2N6031
120 140
120 140
7.0
16
20
5.0
200
1.14
– 65 to + 200
Symbol
θJC
Max
0.875
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
(1) Indicates JEDEC Registered Data.
200
NPN
2N5630
2N5631
PNP
2N6030
2N6031
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
100 –120 –140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
TC, TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
2N5630 2N5631 2N6030 2N6031
PACKAGE DIMENSIONS
E
V
H
A
N
C
–T–
SEATING
PLANE
D 2 PL
K
0.13 (0.005) M T Q M Y M
U
L
–Y–
2
GB
1
–Q–
0.13 (0.005) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
INCHES
DIM MIN MAX
A 1.550 REF
B ––– 1.050
C 0.250 0.335
D 0.038 0.043
E 0.055 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N ––– 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
––– 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
––– 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N5630.PDF ] | |
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