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PDF 2N5442 Data sheet ( Hoja de datos )

Número de pieza 2N5442
Descripción 40 AMP SILICON TRIACS
Fabricantes Digitron Semiconductors 
Logotipo Digitron Semiconductors Logotipo



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No Preview Available ! 2N5442 Hoja de datos, Descripción, Manual

DIGITRON SEMICONDUCTORS
2N5441-2N5446, T6420 SERIES
40 AMP SILICON TRIACS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (Sinusoidal supply voltage at frequency 50/60Hz and with resistive or inductive load)
Rating
Symbol
2N5441
2N5444
T6420B
2N5442
2N5445
T6420D
2N5443
2N5446
T6420M
Unit
Repetitive peak off-state voltage(1)
Gate open, TJ = -65 to 100°C
VDROM
200
400
600
V
RMS on-state current (Conduction angle = 360°)
TC = 70°C (press-fit type)
TC = 65°C (stud type)
TC = 60°C (isolated stud type)
IT(RMS)
40
40
40
A
Peak surge (non-repetitive) on state current
For one cycle of applied principal voltage
60Hz (sinusoidal)
50Hz (sinusoidal)
ITSM
300
265
A
Rate of change of on-state current
VDM = VDROM, IGT = 200mA, tr = 0.1µs
di/dt
100
A/µs
Fusing current
TJ = -65° to 110°C, t = 1.25 to 10ms
Peak gate trigger current(2)
For 1µs maximum
I2t
IGTM
450
12
A2s
A
Gate power dissipation
Peak (for 10µs maximum, IGTM 4A
Average
PGM
PG(AV)
40
0.75
W
Storage temperature range
Tstg -65 to 150
°C
Operating temperature range
TC -65 to 110
°C
Terminal temperature (during soldering)
For 10 s maximum (terminals and case)
TT
225
°C
Maximum stud torque
rs
Note 1: For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.
Note 2: For either polarity of gate voltage (VG) with reference to main terminal 1.
50 In. lb.
ELECTRICAL CHARACTERISTICS
Characteristic
Peak off-state current(1)
Gate open, TJ = 110°C, VDROM = maximum rated value
Maximum on-state voltage(1)
IT = 100A(peak), TC = 25°C
IT = 56A(peak), TC = 25°C
DC holding current(1)
Gate open, initial principal current = 500mA(dc), VD = 12V
TC = 25°C
TC = -65°C
Critical rate of rise of commutation voltage(1)
For VD = VDROM, IT(RMS) = 40A, commutating
di/dt = 22A/ms, gate unenergized
TC = 70°C (press fit type)
TC = 65°C (stud type)
TC = 60°C (isolated-stud types)
Symbol
Limits
For all types unless otherwise specified
Min
Typ
Max
IDROM
-
0.2
4
Units
mA
VTM -
-
1.7 2 V
1.5 1.85
IHO -
-
mA
25 60
- 100
dv/dt
V/µs
5 30 -
5 30 -
5 30 -
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130131

1 page




2N5442 pdf
DIGITRON SEMICONDUCTORS
2N5441-2N5446, T6420 SERIES
40 AMP SILICON TRIACS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
www.digitroncorp.com
Rev. 20130131

5 Page










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