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Número de pieza | 2N6676 | |
Descripción | NPN High Power Silicon Transistor | |
Fabricantes | MA-COM | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N6676 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 2N6676 & 2N6678
NPN High Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/538
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
Collector - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Test Conditions
Symbol Units Min.
IC = 200 mAdc, 2N6676
IC = 200 mAdc, 2N6678
V(BR)CEO Vdc
VCE = 450 Vdc, VBE = -1.5 Vdc, 2N6676
VCE = 650 Vdc, VBE = -1.5 Vdc, 2N6678
ICEX µAdc
VEB = 7 Vdc
IEBO mAdc
VCB = 450 Vdc, 2N6676
VCB = 650 Vdc, 2N6678
ICBO mAdc
300
400
—
—
—
IC = 1 Adc, VCE = 3 Vdc
IC = 15 Adc, VCE = 3 Vdc
HFE -
15
8
Collector - Emitter Sustaining Voltage
IC = 15 Adc, IB = 3 Adc
VCE(SAT) Vdc
—
Base - Emitter Saturation Voltage
Dynamic Characteristics
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 15 Adc, IB = 3 Adc
VBE(SAT) Vdc
—
IC = 1 Adc, VCE = 10 Vdc, f = 5 kHz
| HFE | -
3
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF
150
Max.
—
1.0
2.0
1.0
40
20
1.0
1.5
10
500
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
1
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DC-0013439
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2N6676.PDF ] |
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