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PDF 2N6677 Data sheet ( Hoja de datos )
| Número de pieza | 2N6677 | |
| Descripción | NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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2N6676
2N6677
2N6678
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6676 SERIES
types are NPN Silicon Power Transistors designed for
high voltage switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
2N6676
450
300
2N6677
550
350
8.0
15
20
5.0
175
-65 to +200
1.0
2N6678
650
400
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE(off)=1.5V
ICEV
VCE=Rated VCEV, VBE(off)=1.5V, TC=100°C
IEBO
VEB=8.0V
BVCEO
IC=200mA (2N6676)
300
BVCEO
IC=200mA (2N6677)
350
BVCEO
IC=200mA (2N6678)
400
VCE(SAT) IC=15A, IB=3.0A
VBE(SAT) IC=15A, IB=3.0A
hFE VCE=3.0V, IC=15A
8.0
Cob VCB=10V, IE=0, f=1.0MHz
ft VCE=10V, IC=1.0A, f=5.0MHz
3.0
td
tr
ts
VCC=200V, IC=15A, IB1=IB2=3.0A
tp=20μs, Duty Cycle≤2.0%
VBB≈6.0V, RL=13.5Ω
tf
MAX
100
1.0
2.0
1.5
1.5
500
10
0.1
0.6
2.5
0.5
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
μA
mA
mA
V
V
V
V
V
pF
MHz
μs
μs
μs
μs
R0 (26-July 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6677.PDF ] | |
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