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PDF VS-MURB1620CT-1PbF Data sheet ( Hoja de datos )

Número de pieza VS-MURB1620CT-1PbF
Descripción Ultrafast Rectifier ( Diode )
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VS-MURB1620CT-1PbF Hoja de datos, Descripción, Manual

VS-MURB1620CTPbF, VS-MURB1620CT-1PbF
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 2 x 8 A FRED Pt®
TO-263AB (D2PAK)
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
12 3
Anode Common Anode
1 cathode 2
VS-MURB1620CTPbF
12 3
Anode Common Anode
1 cathode 2
VS-MURB1620CT-1PbF
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
2x8A
VR 200 V
VF at IF
trr
TJ max.
0.895 V
35 ns
175 °C
Diode variation
Common cathode
DESCRIPTION / APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
Rated VR, TC = 150 °C
Rated VR, square wave, 20 kHz, TC = 150 °C
MAX.
200
8.0
16
100
16
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
200
Forward voltage
IF = 8 A
VF
IF = 8 A, TJ = 150 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 200 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
-
-
-
-
25
8.0
MAX.
-
0.975
0.895
5
250
-
-
UNITS
V
μA
pF
nH
Revision: 10-Jul-15
1 Document Number: 94519
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-MURB1620CT-1PbF pdf
VS-MURB1620CTPbF, VS-MURB1620CT-1PbF
www.vishay.com
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
5 Document Number: 94519
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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