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Número de pieza | 2N6116 | |
Descripción | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS | |
Fabricantes | Digitron Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N6116 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! 2N6116-2N6118
High-reliability discrete products
and engineering services since 1977
SILICON PROGRAMMABLE UNIJUNCTION
TRANSISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Repetitive peak forward current
100µs pulse width, 1.0% duty cycle
20µs pulse width, 1.0% duty cycle
Non repetitive peak forward current
10µs pulse width
DC forward anode current
Derate above 25°C
DC gate current
Gate to cathode forward voltage
Gate to cathode reverse voltage
Gate to anode reverse voltage
Anode to cathode voltage
Forward power dissipation @ TA = 25°C
Derate above 25°C
Operating junction temperature range
Storage temperature range
Symbol
ITRM
ITSM
IT
IG
VGKF
VGKR
VGAR
VAK
PF
1/ӨJA
TJ
Tstg
Value
1.0
2.0
5.0
200
2.0
±20
40
5.0
40
±40
250
2.5
-55 to 125
-65 to 200
Unit
Amp
Amp
mA
mA/°C
mA
Volt
Volt
Volt
Volt
mW
mW/°C
°C
°C
ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Offset voltage
(VS = 10Vdc, RG = 1.0MΩ)
(VS = 10Vdc, RG = 10kΩ)
2N6116
2N6117
2N6118
All types
0.2 0.70 1.6
VT 0.2 0.50 0.6 Volts
0.2 0.40 0.6
0.2 0.35 0.6
Gate to anode leakage current
(VS = 40Vdc, TA = 25°C, cathode open)
(VS = 40Vdc, TA = 75°C, cathode open)
IGAO - 1.0 5.0 nAdc
- 30 75
Gate to cathode leakage current
(VS = 40Vdc, anode to cathode shorted)
IGKS - 5.0 50 nAdc
Peak current
(VS = 10Vdc, RG = 1MΩ)
(VS = 10Vdc, RG = 10kΩ)
2N6116
2N6117
2N6118
2N6116
2N6117
2N6118
- 1.25 2.00
- 0.19 0.30
lp
-
0.08 0.15
µA
- 4.00 5.00
- 1.20 2.00
- 0.70 1.00
Rev. 20150504
1 page High-reliability discrete products
and engineering services since 1977
2N6116-2N6118
SILICON PROGRAMMABLE UNIJUNCTION
TRANSISTORS
Rev. 20150504
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2N6116.PDF ] |
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