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Número de pieza | 2N6251 | |
Descripción | NPN Darlington Power Silicon Transistor | |
Fabricantes | MA-COM | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N6251 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 2N6249, 2N6250, & 2N6251
NPN Darlington Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per
MIL-PRF-19500/371
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Collector - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Sustaining Voltage
Base - Emitter Saturation Voltage
Test Conditions
Symbol Units Min.
IC = 20 mAdc, L = 42 mH, 30 - 60 GHz
(see figure 10 of MIL-PRF-19500/510)
2N6249
2N6250
2N6251
IC = 20 mAdc, L = 42 mH, 30 - 60 GHz
(see figure 10 of MIL-PRF-19500/510)
2N6249
2N6250
2N6251
V(BR)CEO Vdc
V(BR)CER Vdc
VEB = 6 Vdc
IEBO µAdc
VCE = 150 Vdc, 2N6249
VCE = 225 Vdc, 2N6250
VCE = 225 Vdc, 2N6251
VCE = 225 Vdc, VBE = -1.5 Vdc, 2N6249
VCE = 300 Vdc, VBE = -1.5 Vdc, 2N6250
VCE = 375 Vdc, VBE = -1.5 Vdc, 2N6251
VCE = 300 Vdc, 2N6249
VCE = 325 Vdc, 2N6250
VCE = 450 Vdc, 2N6251
ICEO mAdc
ICEX µAdc
IEBO mAdc
—
—
—
—
—
—
IC = 10 Adc, VCE = 3 Vdc
2N6249
2N6250
2N6251
IC = 10 Adc, IB = 1.0 Adc, 2N6249
IC = 10 Adc, IB = 1.25 Adc, 2N6250
IC = 10 Adc, IB = 1.67 Adc, 2N6251
IC = 10 Adc, IB = 1.0 Adc, 2N6249
IC = 10 Adc, IB = 1.25 Adc, 2N6250
IC = 10 Adc, IB = 1.67 Adc, 2N6251
HFE -
VCE(SAT) Vdc
VBE(SAT) Vdc
10
8
6
—
—
1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
Max.
200
275
350
225
300
375
100
1.0
100
1.0
50
50
50
1.5
2.25
1
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DC-0013428
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2N6251.PDF ] |
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