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PDF 2N6232 Data sheet ( Hoja de datos )
| Número de pieza | 2N6232 | |
| Descripción | SILICON NPN TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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SILICON NPN TRANSISTOR
TECHNICAL DATA
Devices
2N6232
• FAST SWITCHING
• LOW SATURATION VOLTAGE
10 AMP
100 V
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Peak (1)
Base Current – Continuous
Total Power Dissipation @ TC = 250C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
(1) Pulse Test: Pulse Width = Duty Cycle < %
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
Value
100
140
7.0
10
1.25
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W/0C
0C
Symbol
RθJC
Max.
6.67
Unit
0C/W
TO-5
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (2)
IC = 100 mAdc, IB = 0
Collector-Emitter Cutoff Current
VCEO(sus)
VCE = 140 Vdc, Rbe = 0
Collector Cutoff Current
ICES
VCE = 100 Vdc, RBE = 0 Ω, TC = 1500C
Emitter-Base Cutoff Current
ICES
VEB = 7.0 Vdc, IC = 0
IEBO
Min. Max.
Unit
100 Vdc
0.2 uAdc
0.1 mAdc
10 uAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
10604
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6232.PDF ] | |
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