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PDF 2N6315 Data sheet ( Hoja de datos )
| Número de pieza | 2N6315 | |
| Descripción | COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS | |
| Fabricantes | Seme LAB | |
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MECHANICAL DATA
Dimensions in mm (inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
12
2N6315
2N6317
6.35 (0.250)
8.64 (0.340)
COMPLEMENTARY SILICON
MEDIUM POWER TRANSISTORS
COMPLEMENTARY TRANSISTORS
2N6315 (NPN) AND 2N6317 (PNP)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
Pin 1 –Base
TO–66 (TO-213AA)
Pin 2 –Emitter
Case – Collector
FEATURES
• Low Collector Emitter Saturation Voltage
• Low Leakage Current
• Excellent DC Current Gain
APPLICATIONS:
Designed for general purpose amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS(Tc = 25°C unless otherwise stated)
VCEO
Collector – Emitter Voltage
VCBO
Collector – Base Voltage
VEBO
Emitter – Base Voltage
IC Collector Current
Continuous
Peak
IB Base Current
PD Total Dissipation @ TC = 25°C
Derate above 25°C
TSTG , TJ
RθJC
Operating and Storage Junction Temperature Range
Thermal Resistance – Junction - Case
60V
60V
5V
7A
15A
2A
90W
0.515W/°C
–65 to +200°C
1.94°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 5353
Issue 1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6315.PDF ] | |
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