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PDF 2N3879 Data sheet ( Hoja de datos )
| Número de pieza | 2N3879 | |
| Descripción | NPN POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3879 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/526
Devices
2N3879
TECHNICAL DATA
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = 250C (1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 200 mW/0C for TC > 250C
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
TJ, Tstg
Value
75
120
7.0
5.0
7.0
35
-65 to +200
Symbol
RθJC
Max.
5.0
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
V(BR)CEO
Collector-Emitter Cutoff Current
VCE = 50 Vdc
ICEO
Collector-Emitter Cutoff Current
VCE = 100 Vdc, VBE = 1.5 Vdc
ICEX
Collector-Base Cutoff Current
VCB = 120 Vdc
ICBO
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Unit
0C/W
TO-66*
(TO-213AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
75 Vdc
5.0 Vdc
4.0 mAdc
25 mAdc
10 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3879.PDF ] | |
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