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PDF 2N5432 Data sheet ( Hoja de datos )
| Número de pieza | 2N5432 | |
| Descripción | N-Channel Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET | |
| Logotipo |  |
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8/2014
2N5432, 2N5433, 2N5494
N-Channel Silicon Junction Field-Effect Transistor
∙ Low rDS(on)
∙ Excellent Switching
∙ Low Cutoff Current
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -25V
Continuous Forward Gate Current
100 mA
Continuous Device Power Dissipation 300 mW
Power Derating
2.3 mW/oC
Storage Temperature Range
-65oC to +150oC
At 25oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown
Voltage
V(BR)GSS
Gate Reverse Current
IGSS
Gate Source Cutoff Voltage
VGS(OFF)
Drain Saturation Current
(pulsed)
IDSS
Dynamic Electrical Characteristics
Drain -Source On Resistance
rds(on)
Common-Source Input
Capacitance
Ciss
Common-Source Reverse
Transfer Capacitance
Turn-On Delay Time
Crss
td
Rise Time
Turn-Off Time
tr
toff
Fall Time
tf
2N5432
NJ450
Min Max
-25
-200
-4 -10
150
5
30
15
4
1
6
30
2N5433
NJ450
Min Max
-25
-200
-3 -9
100
7
30
15
4
1
6
30
2N5434
NJ903
Min Max
-25
-200
-1 -4
30
10
30
15
4
1
6
30
Unit
V
pA
V
mA
Ω
pF
pF
nS
nS
nS
nS
Process
Test Conditions
IG = -1 uA, VDS = 0 V
VGS = -10 V, VDS = 0 V
VDS = 10 V, VGS = 0 V
VDS = 10 V, VGS = 0 V
VGS = 0 V, ID = 0 V
VDS = 0 V, VGS = -10 V
VDS = 0 V, VGS = -10 V
VDD = -1.5 V,
VGS(on) = 0 V,
VGS(off) = -12 V,
ID(on) = 10 mA
f=1
kHz
f=1
MHz
f=1
MHz
Surface Mount
SMP5432, SMP5433,
SMP5434
715 N. Glenville Dr., Ste. 400
Richardson, TX 75089
(972) 238-9700 Fax (972) 238-5338
www.interfet.com
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N5432.PDF ] | |
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