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PDF 2N7002KG8 Data sheet ( Hoja de datos )

Número de pieza 2N7002KG8
Descripción MOSFET ( Transistor )
Fabricantes Silikron 
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No Preview Available ! 2N7002KG8 Hoja de datos, Descripción, Manual

Main Product Characteristics:
VDSS
60V
RDS(on) 7.5ohm(max.)
ID A
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SOT-363
2N7002KG8
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
60
±20
0.115
0.8
0.38
-55 To 150
Unit
V
V
A
A
W
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
328 /W
©Silikron Semiconductor CO., LTD.
2011.07.17
www.silikron.com
Version: 1.1
page 1 of 6

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2N7002KG8 pdf
Ordering and Marking Information
Device Marking: 702
Package (Available)
SOT-363
Operating Temperature Range
C : -55 to 150 ºC
2N7002KG8
Devices per Unit
Package Units/ Tapes/Inner
Type
Tape Box
SOT-363 3000
10
Units/Inner
Box
30000
Inner
Boxes/Carton
Box
4
Units/Carton
Box
120000
Reliability Test Program
Test Item Conditions
High
Tj=125to 150@
Temperature 80% of Max
Reverse
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150or 150@
Temperature 100% of Max VGSS
Gate
Bias(HTGB)
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
©Silikron Semiconductor CO., LTD.
2011.07.17
www.silikron.com
Version: 1.1
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