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PDF 2N5760 Data sheet ( Hoja de datos )
| Número de pieza | 2N5760 | |
| Descripción | COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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2N5758 2N5759 2N5760 NPN
2N6226 2N6227 2N6228 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5758, 2N6226
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for medium power amplifier and switching applications
where high voltages are required.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N5758
2N6226
100
2N5759
2N6227
120
2N5760
2N6228
140
100 120 140
7.0
6.0
10
4.0
150
-65 to +200
1.17
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N5758
2N5759
2N6226
2N6227
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICBO
VCB=Rated VCBO
- 1.0
- 1.0
ICEV
VCE=Rated VCEO, VEB=1.5V
- 1.0
- 1.0
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C - 5.0
- 5.0
ICEO
VCE=½Rated VCEO
- 1.0
- 1.0
IEBO
VEB=7.0V
- 1.0
- 1.0
BVCEO IC=200mA
100 -
120 -
VCE(SAT) IC=3.0A, IB=0.3A
- 1.0
- 1.0
VCE(SAT) IC=6.0A, IB=1.2A
- 2.0
- 2.0
VBE(ON) VCE=2.0V, IC=3.0A
- 1.5
- 1.5
hFE VCE=2.0V, IC=3.0A
25 100 20 80
hFE VCE=2.0V, IC=6.0A
5.0 -
5.0 -
hfe VCE=10V, IC=2.0A, f=1.0kHz
15 -
15 -
fT VCE=20V, IC=0.5A, f=0.5MHz
1.0 -
1.0 -
Cob VCB=10V, IE=0, f=100kHz
- 300
- 300
2N5760
2N6228
MIN MAX
- 1.0
- 1.0
- 5.0
- 1.0
- 1.0
140 -
- 1.0
- 2.0
- 1.5
15 60
5.0 -
15 -
1.0 -
- 300
UNITS
mA
mA
mA
mA
mA
V
V
V
V
MHz
pF
R1 (15-February 2013)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N5760.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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