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PDF GA201 Datasheet ( Hoja de datos )

Número de pieza GA201
Descripción SILICON CONTROLLED RECTIFIERS
Fabricantes Digitron Semiconductors 
Logotipo Digitron Semiconductors Logotipo

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GA201 Hoja de datos, Descripción, Manual
GA200-GA201A
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Ratings
Repetitive peak off state voltage
Repetitive peak on state current
DC on state current
70°C ambient
70°C case
Peak gate current
Average gate current
Reverse gate current
Reverse gate voltage
Thermal resistance
Storage temperature range
Operating temperature range
Symbol
VDRM
ITRM
IT
IGM
IG(AV)
IGR
VGR
RӨCA
Tstg
TJ
GA200
GA200A
60V
GA201
GA201A
100V
GB200
GB200A
60V
Up to 100A
GB201
GB201A
100V
200mA
400mA
250mA
25mA
3mA
5V
300°C/W
-65° to 200°C
-65° to 150°C
-
6A
250mA
50mA
3mA
5V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Test
Symbol
Min.
Typ.
Max. Units
Test Conditions
Delay time
td
-
-
20
10
30
-
ns
Rise time (GA200, GA200A, GB200, GB200A)
tr
-
-
15
25
25
-
ns
Rise time (GA201, GA201A, GB201, GB201A)
tr
-
-
10
20
20
-
ns
Gate trigger on pulse width
Circuit commutated turn-off time
(GA200, GA201, GB200, GB201)
(GA200A, GA201A, GB200A, GB201A)
tpg(on) - 0.02 0.05 µs
tq - 0.8 2.0 µs
- 0.3 0.5
IG = 20mA, IT = 1A
IG = 30mA, IT = 1A
VD = 60V, IT = 1A(1)
VD = 60V, IT = 30A(1)
VD = 100V, IT = 1A(1)
VD = 100V, IT = 30A(1)
IG = 10mA, IT = 1A
IT = 1A, IR = 1A, RGK = 1K
Off-state current
IDRM
-
-
0.01 0.1 µA
20 100 µA
VDRM = Rating, RGK = 1K
VDRM = rating, RGK = 1K, 150°C
Reverse current
IRRM - 1.0 10 mA
VRRM = 30V, RGK = 1K(2)
Reverse gate current
IGR - 0.01 0.1 mA
VGRM = 5V
Gate trigger current
IGT - 10 200 µA
VD = 5V, RGS = 10K
Gate trigger voltage
VGT
0.4 0.6 0.75
0.10 0.20
-
V
V
VD = 5V, RGS = 100Ω, T = 25°C
T = 150°C
On-state voltage
VT - 1.1 1.5 V
IT = 2A
Holding current
IH
0.3 2.0
0.05 0.2
5.0 mA
- mA
VD = 5V, RGK = 1K, T = 25°C
T = 150°C
Off-state voltage - critical rate of rise
dv/dt
20
40
- V/µS
VD = 30V, RGK = 1K
Note 1: IG = 10mA, Pulse test: Duty cycle < 1%.
Note 2: Pulse test intended to guarantee reverse anode voltage capability for pulse commutation. Device should not be operated in the reverse blocking mode on a continuous basis.
Rev. 20130117

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