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PDF SHD431002 Data sheet ( Hoja de datos )

Número de pieza SHD431002
Descripción PNP SWITCHING TRANSISTOR
Fabricantes SENSITRON SEMICONDUCTOR 
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No Preview Available ! SHD431002 Hoja de datos, Descripción, Manual

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 646, REV. A
SHD431002
PNP SWITCHING TRANSISTOR
SHD431002S -- S-100 (JANTX) Screening
Hermetic, Ceramic Package
Electrically Equivalent to MMBT3640
Surface Mount Package
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value Units
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Operating and Storage Junction Temperature Range
12
12
4.0
200
-55 to +150
V
V
V
mA
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
TA = 25°C unless otherwise noted
Max
Units
650 mW
5.23
mW/°C
191 °C/W
Electrical Characteristics
Symbol Parameter
Test Conditions
TA = 25°C unless otherwise noted
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
Collector-Emitter Breakdown Voltage*
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage*
V(BR)EBO
Emitter-Base Breakdown Voltage*
ICES Collector Cutoff Current
IB Base Current
IC = 10 mA, IB = 0
IC = 100 µA,VBE = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE =6.0V, VBE = 0
VCE =6.0V, VBE = 0,TA = 65°C
VCE = 6.0 V, VBE = 0
12
12
12
4.0
-
-
-
-
-
-
0.01
1.0
10
V
V
V
V
µA
µA
nA
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - [email protected]

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