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PDF PMBT2907 Data sheet ( Hoja de datos )
| Número de pieza | PMBT2907 | |
| Descripción | PNP switching transistor | |
| Fabricantes | NXP Semiconductors | |
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PMBT2907
40V, 600 mA, PNP switching transistor
6 March 2015
Product data sheet
1. General description
PNP switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMBT2222
60V variant: PMBT2907A
2. Features and benefits
• Single general-purpose switching transistor
• AEC-Q101 qualified
3. Applications
• Switching and linear amplification
4. Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
Conditions
open base
VCE = -10 V; IC = -150 mA;
Tamb = 25 °C
Min Typ Max Unit
- - -40 V
--
100 -
-600
300
mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 E emitter
3 C collector
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
C
B
E
sym132
1 page  
Nexperia
PMBT2907
40V, 600 mA, PNP switching transistor
10. Characteristics
Table 7.
Symbol
ICBO
IEBO
hFE
VCEsat
VBEsat
td
tr
ton
ts
tf
toff
CC
CE
fT
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = -50 V; IE = 0 A; Tamb = 25 °C
VCB = -50 V; IE = 0 A; Tj = 125 °C
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = -10 V; IC = -0.1 mA; Tamb = 25 °C
VCE = -10 V; IC = -1 mA; Tamb = 25 °C
VCE = -10 V; IC = -10 mA; Tamb = 25 °C
VCE = -10 V; IC = -150 mA;
Tamb = 25 °C
VCE = -10 V; IC = -500 mA;
Tamb = 25 °C
collector-emitter
saturation voltage
IC = -150 mA; IB = -15 mA;
Tamb = 25 °C
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
base-emitter saturation IC = -150 mA; IB = -15 mA;
voltage
Tamb = 25 °C
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
delay time
rise time
IC = -150 mA; IBon = -15 mA;
IBoff = 15 mA; Tamb = 25 °C
turn-on time
storage time
fall time
turn-off time
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
emitter capacitance
VEB = -2 V; IC = 0 A; ic = 0 A; f = 1 MHz;
Tamb = 25 °C
transition frequency
VCE = -20 V; IC = -50 mA; f = 100 MHz;
Tamb = 25 °C
Min Typ Max Unit
- - -20 nA
- - -20 µA
- - -50 nA
35 -
50 -
75 -
100 -
-
-
-
300
30 -
-
- - -400 mV
- - -1.6 V
- - -1.3 V
- - -2.6 V
- - 12 ns
- - 30 ns
- - 40 ns
- - 300 ns
- - 65 ns
- - 365 ns
- - 8 pF
- - 30 pF
200 - - MHz
PMBT2907
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 March 2015
© Nexperia B.V. 2017. All rights reserved
5 / 14
5 Page 
Nexperia
PMBT2907
40V, 600 mA, PNP switching transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMBT2907 v.5
20150306
Product data sheet
-
PMBT2907_
PMBT2907A v.4
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors
• Legal texts have been adapted to the new company name where appropriate
• Data sheet PMBT29007_PMBT2907A split into two separate data sheets
PMBT2907_
PMBT2907A v.4
20040116
Product data sheet
-
PMBT2907_
PMBT2907A v.3
PMBT2907_
PMBT2907A v.3
19990427
Product specification -
PMBT2907_
PMBT2907A v.2
PMBT2907_
PMBT2907A v.2
19970904
Product specification -
PMBT2907_
PMBT2907A v.1
PMBT2907_
PMBT2907A v.1
19970507
Product specification -
-
PMBT2907
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 March 2015
© Nexperia B.V. 2017. All rights reserved
11 / 14
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