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PDF MMBT2222ALT1 Data sheet ( Hoja de datos )

Número de pieza MMBT2222ALT1
Descripción General Purpose Transistor
Fabricantes WILLAS 
Logotipo WILLAS Logotipo



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No Preview Available ! MMBT2222ALT1 Hoja de datos, Descripción, Manual

WILLAS
FM120-M+
MMBT2222(A)LTTH1RU
1G.0AeSnUReFArCaElMPOuUNrTpSoCHsOeTTTKrYaBAnRsRIiEsRtRoErCTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
NPN SBilaitccoh pnrocess design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
RoHS porpotdimucizt efobropaarcdksinpgacoed. e suffix "G",
MHaoliosgt••ueHLnreoifgwrSeheepcnoupswrriroetedirvnulitoctcyst asfLop, erahvpibgeaihllcitk1eyi,fnfligocwiceofndoceryw.saurfdfixvo"Hlta" .ge drop.
High surge capability.
Guardring for overvoltage protection.
MAXIMUUMltrRa AhiTgIhN-GspSeed switching.
SRilaictionng epitaxial planar chip,Smymetbaol lsilicon ju22n2c2tion.
Lead-free parts meet environmental standards of
2222A
CollecMtoIrL–E-SmTitDte-r1V9o5lt0a0ge/228
V CEO
30
RoHS product for packing code suffix "G"
CollecHtoarloBgaesnefrVeoeltapgroeduct for packingVcCoBdOe suffix "H"60
40
75
EmitMter–eBcasheaVonltaigceal data V EBO
5.0
6.0
CollecEtoproCxuyrr:eUntL94C-Von0tirnautoeudsflame reItCardant 600
600
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Unit
Vdc
Vdc
Vdc
mAdc
0.071(1.8)
0.056(1.4)
SOT– 23
3
0.04C0O(1L.0L)ECTOR
0.024(0.6)
THERMACLasCeH: MARolAdeCdTpElaRsItSicT,ISCOSD-123H
CharaTcetermrisintica
ls
:Plate
d
terminals,
solderable
,
peSr yMmIbLo-Sl TD-750 Max
Method 2026
Total Device Dissipation FR– 5 Board, (1)
TA =2P5o°Clarity : Indicated by cathode band
PD
225
DerateMaobuonvtein2g5P°Cosition : Any
1.8
0.031(0.8) Typ.
Unit
1
BASE
0.031(0.8) Typ.
mW
2
Dimensions in inches and (millimeters)EMITTER
mW/°C
ThermWaleRigehstis:tAanpcper,oJxuinmcatiotendto0A.0m1b1iegnrtam
RθJA
556 °C/W
Total Device Dissipation
PD 300 mW
Alumina SubsMtrAatXe,I(M2)UTMA = R25A°CTINGS AND ELECTRICAL CHARACTERISTICS
RatDinegrsataet a2b5ovea2mbCient temperature unless otherwise specified.
2.4
mW/°C
SingTlheeprmhaasl eRheasilsf twanacvee,, J6u0nHczti,ornetsoisAtimveboiefnitnductive load.RθJA
417 °C/W
  ForJcuanpcaticointivaenldoaSdto, rdaegreatTeemcuprererantubrey 20%
TJ , Tstg
–55 to +150
°C
ORDERING INFORMATION
Device
Marking
Shipping
MMBT2222LT1
M1B 3000/Tape & Reel
MMBT2222ALT1 1P 3000/Tape & Reel
DEVICE MARKINGRATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
MMBT2222LT1= M1B ; M MBT2222ALT1= 1 P
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
MEaLxEimCuTmRRICMASLVoCltaHgAeRACTERISTICS (TA = 25°C uVnRleMsSs other1w4ise note2d1.)
28
35
42
18 10
115 120
80 100 150 200 Volts
56 70 105 140 Volts
Maximum DC BlocCkihnagrVacotlteargisetic
VDC 20 Sym30bol 4M0 in 50 Max 60 Unit80 100 150 200 Volts
Maximum Average Forward Rectified Current
  OFF CHARACTERISTICS
IO
 
PeakCFoollrewcatordr–SEumrgeittCerurBrerenta8k.d3omwsnsVinogllteahgaelf sineM-wMavBeT22I2F2SM
superimposed on rated load (JEDEC method)
(I C = 10 mAdc, I B = 0)
Typical Thermal Resistance (Note 2)
TypiCcaolllJeucntocrtioBnaCsaepBacreitaakndceow(NnoVteol1ta) ge
MMBT2222A
RΘJA
MMBT222C2J
Ope(rIaCtin=g1T0eµmApdecra, tIuEre= R0)ange
MMBT222T2JA
StorEagmeitTteerm–BpearsaetuBrereRaakndgoewn Voltage
MMBT22T2S2TG
  (I E = 10 µAdc, I C = 0)
MMBT2222A
V (BR)CEO
 
 V (BR)CBO
-55 to +125
V (BR)EBO
30
40
60
75
5.0
6.0
1.0
 
30 Vdc
––
 
40
120 Vdc
- 65 to +V1d7c5
––
 
 
-55 to +150
Amps
 
Amps
℃/W
PF
Collector CutoffCCHuArrReAnCt TERISTICS
Max(imVuCmE F=o6rw0 aVrddcV,oIltaEBg(oeff)a=t 13..00AVdDcC)
MMBT2S2Y2M2BAOL FM120-MH FIM1C3EX0-MH FM140-MH FM150-M1H0FM160-MHnFAMd1c80-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50 0.70
0.85
0.9 0.92 Volts
MaxCimoullmecAtovreCraugteofRf CevuerrrseentCurrent at
Rate(dV DCBC=B5lo0cVkidngc,VIoElt=ag0e)
@T
@T
AA==12M255℃MBT222I2R
  (V CB = 60 Vdc, I E = 0)
MMBT2222A
I CBO
––
––
0.5µAdc
0.01 10
0.01
 
mAmp
NOT(EVS:CB = 50 Vdc, I E = 0, T A = 125°C)
MMBT2222
–– 10
1- Me(VasCuBre=d6a0t 1VMdcH,ZI aEn=d0a,pTpliAed= r1e2ve5r°sCe)voltage oMf 4M.0BVTD22C2. 2A
–– 10
2- ThEemrmitatleRr eCsuisttoafnfcCeuFrrroemntJunction to Ambient
 
 
(V EB = 3.0 Vdc, I C = 0)
Base Cutoff Current
MMBT2222A
I EBO
100 nAdc
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
MMBT2222A
I BL
20 nAdc
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
201220-1112-06
WILWLAILSLEALSEECLTERCOTRNOICNICCOCROPR.P.

1 page




MMBT2222ALT1 pdf
WILLAS
FM120-M+
MMBT2222(A)TLHTR1U
1.0GA SeUnRFeArCaElMPOUuNrTpSCoHsOTeTKTYrBaAnRRsIEisR RtoECrTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optim1i0ze board space.
Low powTerJl=os2s5,°Chigh efficiency.
High 0c.8urrent capability, low forward voltage drop.
High
Guar
s
d
ruirnggVefBocE(arsatpo) @avebI
riClv/iItoyBl=.t1a0g
e
protection.
0.6
Ultra high-speed
switching.
1.0 V
Silicon epVitaBEx(oni)a@l pVlaCEn=a10r Vchip, metal silicon junction.
Lead0-.f4ree parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
0.2
Halogen free product for packing code suffix "H"
MechanicalV CE(sat) @ IdC /aI B=t1a0
0
Epoxy :0U.1L09.24-V00.5rat1e.0d 2f.l0ame5.r0eta10rda2n0 t
50 100
200
500 1.0k
Case : Molded plastic, SOD-123H
Terminals :Plated IteC r,mCiOnLaLlsE,CsToOldRerCaUbRleRpEeNr TM(ImL-AS)TD-750,
Method 2F0i2g6ure 11. “On” Voltages
Polarity : Indicated by cathode band
Package outline
+0.5
0
– 0.5
–1.0
SOD-123H
0.146(3.7)
R for V0.130(3.3)
θVC
0.012(0.3) Typ.
CE(sat)
0.071(1.8)
0.056(1.4)
–1.5
–2.0 R θVB for V BE
– 2.5
0.1 0.2
0.5 1.0 2.0
5.0 10 20
0.040(1.0)
500.0241(00.60) 200
500
0.031(0.8) Typ.
0.031(0.8) Typ.
I , COLLECTOR CURRENT (mA)
C
Figure 12. Temperature Coefficients
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
12 13 14 15 16
VRRM
20
30
40
50
60
18 10
115 120
80 100 150 200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105 140 Volts
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 150 200 Volts
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
IO
 
IFSM
RΘJA
CJ
TJ
 
 
-55 to +125
1.0
 
30
40
120
 
 
 
-55 to +150
Amps
 
Amps
℃/W
PF
Storage Temperature Range
 
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9 0.92 Volts
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
NOTES:
@T A=125℃
IR
0.5  
mAmps
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
201220-1121-06
WILWLIALSLAESLEELCETCRTORNOINCICCOCORRPP. .

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