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Número de pieza | 2N2906 | |
Descripción | SILICON PLANAR EPITAXIAL PNP TRANSISTOR | |
Fabricantes | TT | |
Logotipo | ||
1. - 60V, 600mA, PNP Transistor Hay una vista previa y un enlace de descarga de 2N2906 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N2906
• Low Power
• Hermetic TO-18 Metal package.
• Ideally suited for High Speed Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-40V
VEBO
Emitter – Base Voltage
-5V
IC Continuous Collector Current
-600mA
PD Total Power Dissipation at TA = 25°C
400mW
Derate Above 25°C
2.3mW/°C
PD Total Power Dissipation at TC = 25°C
1.8W
Derate Above 25°C
10.3mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max. Units
437.5 °C/W
97.2 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 8078
Website: http://www.semelab-tt.com
Issue 2
Page 1 of 3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2N2906.PDF ] |
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