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PDF 2N2907A Data sheet ( Hoja de datos )
| Número de pieza | 2N2907A | |
| Descripción | High Speed Switching Transistor | |
| Fabricantes | Multicomp | |
| Logotipo |  |
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High Speed Switching Transistor
Features:
• PNP silicon planar switching transistors
• Fast switching devices exhibiting short turn-off and low
saturation voltage characteristics
• Switching and linear application DC and VHF amplifier
applications
Absolute Maximum Ratings
Description
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta = 25ºC
Derate above 25ºC
Power Dissipation @ Tc = 25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
Symbol
Vceo
Vcbo
Vebo
Ic
Pd
Pd
Tj, Tstg
Value
60
5
600
400
2.28
1.8
10.3
-55 to +175
Unit
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
Pin Configuration
1. Emitter
2. Base
3. Collector
Electrical Characteristics (Ta = 25ºC unless specified otherwise)
Description
Symbol
Test Condition
Collector Emitter Voltage
*Vceo
Ic=10mA, Ib=0
Collector Base Voltage
Vcbo
Ic=10µA, Ie=0
Emitter Base Voltage
Vebo
Ie=10µA, Ic=0
Collector Cut Off Current
Icbo
Icex
Vcb = 50V, Ie = 0
Ta = 150°C
Vcb = 50V, Ie = 0
Vce=30V, Vbe=0.5V
Base Current
Ib Vce=30V, Vbe=0.5V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Vce(Sat)*
Vbe(Sat)*
Ic = 150mA, Ib = 15mA
Ic = 500mA, Ib = 50mA
Ic = 150mA, Ib = 15mA
Ic = 500mA, Ib = 50mA
Min.
60
5
-
-
-
-
-
-
Max,
-
-
-
10
10
50
50
1.3
2.6
1.3
2.6
Unit
V
nA
μA
nA
nA
V
V
www.element14.com
www.farnell.com
www.newark.com
Page <1>
30/01/15 V1.0
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N2907A.PDF ] | |
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