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PDF 2N2605UB Data sheet ( Hoja de datos )
| Número de pieza | 2N2605UB | |
| Descripción | PNP SILICON LOW POWER TRANSISTOR | |
| Fabricantes | Microsemi | |
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Hay una vista previa y un enlace de descarga de 2N2605UB (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
DEVICES
2N2604
2N2605
2N2604UB
2N2605UB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C (1)
Operating & Storage Junction Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PT
TJ, Tstg
2N2604 2N2605
80 70
60
6.0
30
400
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW/°C
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
Note:
1/ Consult 19500/354 for thermal curves
Symbol
UB RθJA
Max.
437
275
Unit
°C/mW
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Base Cutoff Current
VCB = 80V dc
VCB = 70V dc
VCB = 50V dc
VCB = 50V dc, TA = +150°C
2N2604, UB
2N2605, UB
2N2604, 2N2605, UB
2N2604, 2N2605, UB
Symbol
ICBO
Min.
10.0
10.0
10.0
5.0
Max.
Unit
uAdc
nAdc
uAdc
uAdc
Collector-Emitter Breakdown Current
IC = 10mAdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 5.0Vdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
V(BR)CEO
60
IEBO
ICES
Vdc
10.0 uAdc
2.0 ηAdc
10 ηAdc
TO-46 (TO-206AB)
UB Package
T4-LDS-0092 Rev. 2 (101320)
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N2605UB.PDF ] | |
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