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Número de pieza SBAW56WT1G
Descripción Dual Switching Diode
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BAW56WT1G,
SBAW56WT1G
Dual Switching Diode,
Common Anode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Reverse Voltage
VR 70 V
Forward Current
IF 200 mA
Peak Forward Surge Current
IFM(surge) 500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD 200 mW
1.6 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
625 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
417
−55 to
+150
°C/W
°C
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
www.onsemi.com
SC−70
CASE 419
STYLE 4
ANODE
3
CATHODE
1
2
CATHODE
MARKING DIAGRAM
A1 M G
G
1
A1 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BAW56WT1G
SBAW56WT1G
SC−70 3,000 / Tape & Reel
(Pb−Free)
SC−70 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 8
1
Publication Order Number:
BAW56WT1/D

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