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PDF VS-25TTS16SPbF Data sheet ( Hoja de datos )
| Número de pieza | VS-25TTS16SPbF | |
| Descripción | Phase Control SCR | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VS-25TTS16SPbF
Vishay Semiconductors
Thyristor Surface Mount, Phase Control SCR, 16 A
4 Anode
2, 4
2
3
1
TO-263AB (D2PAK)
13
Cathode Gate
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
TO-263AB (D2PAK)
Single SCR
16 A
1600 V
1.25 V
45 mA
-40 to 125 °C
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and
JEDEC®-JESD 47
qualified
according
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-25TTS16SPbF of silicon controlled rectifiers is
specifically designed for medium power switching and
phase control applications. The glass passivation
technology used has reliable operation up to 125 °C junction
temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
3.5
Aluminum IMS, RthCA = 15 °C/W
8.5
Aluminum IMS with heatsink, RthCA = 5 °C/W
16.5
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
THREE-PHASE BRIDGE
5.5
13.5
25.0
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IRMS
VRRM/VDRM
ITSM
VT
dV/dt
Sinusoidal waveform
16 A, TJ = 25 °C
dI/dt
TJ
VALUES
16
25
1600
350
1.25
500
150
-40 to +125
VOLTAGE RATINGS
PART NUMBER
VS-25TTS16SPbF
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
1600
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
1600
UNITS
A
UNITS
A
V
A
V
V/μs
A/μs
°C
IRRM/IDRM,
AT 125 °C
mA
10
Revision: 09-Jul-15
1 Document Number: 94679
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
100
10
Rec tangular gate pulse
a)Rec ommended load line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Rec ommended load line for
<= 30%rated d i/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(b )
(a )
VS-25TTS16SPbF
Vishay Semiconductors
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
1
VG D
0.1
0.001
IGD
(4) (3) (2) (1)
Frequency Limited by PG(AV)
0.01 0.1 1 10
Instantaneous Gate Current (A)
Fig. 9 - Thermal Impedance ZthJC Characteristics
100
ORDERING INFORMATION TABLE
Device code VS- 25 T T S 16 S TRL PbF
1 2 3 45678
1 - Vishay Semiconductors product
2 - Current rating (25 = 25 A)
3 - Circuit configuration:
T = single thyristor
4 - Package:
T = TO-220AC
5 - Type of silicon:
S = standard recovery rectifier
6 - Voltage rating: voltage code x 100 = VRRM
7 - S = TO-220 D2PAK (SMD-220) version
8 - None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9 - PbF = lead (Pb)-free
9
16 = 1600 V
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
VS-25TTS16SPbF
50
VS-25TTS16STRRPbF
800
VS-25TTS16STRLPbF
800
MINIMUM ORDER QUANTITY
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Dimensions
Part marking information
Packaging information
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Revision: 09-Jul-15
5 Document Number: 94679
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet VS-25TTS16SPbF.PDF ] | |
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