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PDF VS-20ETF12FP-M3 Data sheet ( Hoja de datos )

Número de pieza VS-20ETF12FP-M3
Descripción Fast Soft Recovery Rectifier Diode
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VS-20ETF12FP-M3 Hoja de datos, Descripción, Manual

VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
2
3
1
TO-220 FULL-PAK
2
13
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-220FP
20 A
1000 V, 1200 V
1.31 V
320 A
95 ns
150 °C
Single die
0.6
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
• Designed and qualified according to
JEDEC®-JESD 47
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 approved
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF...FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
IFSM
trr
VF
TJ
Sinusoidal waveform
1 A, 100 A/μs
20 A, TJ = 25 °C
Range
VALUES
1000 to 1200
20
320
95
1.31
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETF10FPPbF, VS-20ETF10FP-M3
VS-20ETF12FPPbF, VS-20ETF12FP-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
VRSM, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1100
1300
IRRM
AT 150 °C
mA
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
IF(AV)
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
TEST CONDITIONS
TC = 50 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
270
320
365
515
5150
UNITS
A
A2s
A2s
Revision: 11-Feb-16
1 Document Number: 93222
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-20ETF12FP-M3 pdf
VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
25
TJ = 25 °C
20
15
10
5
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
0 50 100 150 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
35
TJ = 150 °C
30
25
20
15
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
10
IFM = 1 A
5
0
0 50 100 150 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
D = 0.5
D = 0.2
1 D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
1E+01
1E+02
Revision: 11-Feb-16
5 Document Number: 93222
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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