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PDF VS-20ETF10S-M3 Data sheet ( Hoja de datos )

Número de pieza VS-20ETF10S-M3
Descripción Surface Mount Fast Soft Recovery Rectifier Diode
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VS-20ETF10S-M3 Hoja de datos, Descripción, Manual

VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
2
3
1
TO-263AB (D2PAK)
Base
cathode
+
2
1
Anode -
3
- Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-263AB (D2PAK)
20 A
800 V, 1000 V, 1200 V
1.31 V
355 A
95 ns
150 °C
Single die
0.6
FEATURES
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-20ETF..S-M3 soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
Sinusoidal waveform
VRRM
IFSM
VF 20 A, TJ = 25 °C
trr 1 A, 100 A/μs
TJ Range
VALUES
20
800 to 1200
355
1.31
95
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
20ETF08S-M3
20ETF10S-M3
20ETF12S-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
IRRM
AT 150 °C
mA
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
Maximum I2t for fusing
I2t
I2t
TEST CONDITIONS
TC = 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
300
355
450
635
6350
UNITS
A
A2s
A2s
Revision: 11-Feb-16
1 Document Number: 94887
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-20ETF10S-M3 pdf
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
25
20ETF.. Series
TJ = 25 °C
20
15
10
5
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0
0 50 100 150 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
1
35
20ETF.. Series
30 TJ = 150 °C
25
20
15
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
10
IFM = 1 A
5
0
0 50 100 150 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
Steady state value
(DC operation)
0.1
0.01
0.0001
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
20ETF.. Series
0.001
0.01
Square Wave Pulse Duration (s)
0.1
Fig. 14 - Thermal Impedance ZthJC Characteristics
1
Revision: 11-Feb-16
5 Document Number: 94887
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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