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PDF VS-20ETF08-M3 Datasheet ( Hoja de datos )

Número de pieza VS-20ETF08-M3
Descripción Fast Soft Recovery Rectifier Diode
Fabricantes Vishay 
Logotipo Vishay Logotipo

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VS-20ETF08-M3 Hoja de datos, Descripción, Manual
www.vishay.com
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
2
TO-220AC
3
1
Base
cathode
2
13
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-220AC
20 A
800 V, 1000 V, 1200 V
1.31 V
320 A
95 ns
150 °C
Single die
0.6
FEATURES
• Glass passivated pellet chip junction
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VRRM
IF(AV)
IFSM
trr
VF
TJ
Sinusoidal waveform
1 A, 100 A/μs
20 A, TJ = 25 °C
Range
VALUES
800 to 1200
20
320
95
1.31
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETF08PbF, VS-20ETF08-M3
VS-20ETF10PbF, VS-20ETF10-M3
VS-20ETF12PbF, VS-20ETF12-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
IRRM
AT 150 °C
mA
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Maximum I2t for fusing
Maximum I2t for fusing
I2t
I2t
TEST CONDITIONS
TC = 113 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
270
320
365
515
5150
UNITS
A
A2s
A2s
Revision: 11-Feb-16
1 Document Number: 94098
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page

VS-20ETF08-M3 pdf
www.vishay.com
VS-20ETF..PbF Series, VS-20ETF..-M3 Series
Vishay Semiconductors
35
20ETF.. Series
30 TJ = 150 °C
25
20
15
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
10
IFM = 1 A
5
0
0 50 100 150 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
Steady state value
(DC operation)
0.1
0.01
0.0001
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
20ETF.. Series
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
1
Revision: 11-Feb-16
5 Document Number: 94098
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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