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PDF VS-15ETX06PbF Data sheet ( Hoja de datos )

Número de pieza VS-15ETX06PbF
Descripción Hyperfast Rectifier
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! VS-15ETX06PbF Hoja de datos, Descripción, Manual

VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 15 A FRED Pt®
TO-220AC
Base
cathode
2
TO-220 FULL-PAK
13
Cathode Anode
VS-15ETX06PbF
VS-15ETX06-N3
13
Cathode Anode
VS-15ETX06FPPbF
VS-15ETX06FP-N3
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-220AC, TO-220FP
15 A
600 V
3.2 V
18 ns
175 °C
Single die
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Benchmark ultralow forward voltage drop
• Low leakage current
• Fully isolated package (VINS = 2500 VRMS)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
VRRM
IF(AV)
IFSM
IFM
TJ, TStg
TEST CONDITIONS
TC = 133 °C
TC = 62 °C (FULL-PAK)
TJ = 25 °C
VALUES
600
15
170
30
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
600
Forward voltage
IF = 15 A
VF
IF = 15 A, TJ = 150 °C
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 600 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.3
1.5
0.1
40
20
8.0
MAX.
-
3.2
1.8
50
300
-
-
UNITS
V
μA
pF
nH
Revision: 02-Jan-11
1 Document Number: 94006
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-15ETX06PbF pdf
VS-15ETX06PbF, VS-15ETX06-N3, VS-15ETX06FPPbF, VS-15ETX06FP-N3
www.vishay.com
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(4) Qrr - area under curve defined by trr
and IRRM
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 02-Jan-11
5 Document Number: 94006
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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