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PDF C106M1 Data sheet ( Hoja de datos )
| Número de pieza | C106M1 | |
| Descripción | Sensitive Gate Silicon Controlled Rectifiers | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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C106 Series
Preferred Devices
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
• Glassivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
• Sensitive Gate Triggering
• Device Marking: Device Type, e.g., C106B, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off–State Voltage (Note 1)
(Sine Wave, 50–60 Hz, RGK = 1 kΩ,
TC = –40° to 110°C)
C106B
C106D, C106D1
C106M, C106M1
VDRM,
VRRM
Volts
200
400
600
On-State RMS Current
(180° Conduction Angles, TC = 80°C)
Average On–State Current
(180° Conduction Angles, TC = 80°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = +110°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
IT(AV)
ITSM
I2t
4.0 Amps
2.55 Amps
20 Amps
1.65
A2s
Forward Peak Gate Power
(Pulse Width v1.0 µsec, TC = 80°C)
Forward Average Gate Power
(Pulse Width v1.0 µsec, TC = 80°C)
Forward Peak Gate Current
(Pulse Width v1.0 µsec, TC = 80°C)
Operating Junction Temperature Range
PGM
0.5 Watt
PG(AV) 0.1 Watt
IGM 0.2 Amp
TJ
–40 to
°C
+110
Storage Temperature Range
Tstg
–40 to
°C
+150
Mounting Torque (Note 2)
– 6.0 in. lb.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006).
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.
http://onsemi.com
SCRs
4 AMPERES RMS
200 thru 600 VOLTS
G
AK
3
21
TO–225AA
(formerly TO–126)
CASE 077
STYLE 2
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
ORDERING INFORMATION
Device
Package
Shipping
C106B
TO225AA
500/Box
C106D
TO225AA
500/Box
C106D1
C106M
TO225AA
TO225AA
500/Box
500/Box
C106M1
TO225AA
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 4
1
Publication Order Number:
C106/D
1 page  
C106 Series
Package Interchangeability
The dimensional diagrams below compare the critical dimensions of the ON Semiconductor
C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of
the ON Semiconductor package make it compatible in most lead-mount and chassis-mount
applications. The user is advised to compare all critical dimensions for mounting compatibility.
_.2_9_5_
.305
_.1_4_5_
.155
_.1_4_8_
.158
123
_.0_5_0_
.095
_.1_1_5_
.130
_.4_2_5_ 5_ TYP
.435
_.5_7_5_
.655
.040
.094 BSC
_.0_2_5_
_.0_2_0_ .035
.026
_.0_9_5_
.105
_.0_1_5_
.025
_.0_4_5_
.055
ON Semiconductor C-106 Package
_.1_3_5_
.115
_.3_8_5_
.365
_.4_2_0_
.400
_.1_0_5_
.095
_.4_0_0_
.360
_.1_2_7_ DIA
.123
_.5_2_0_
.480
_.3_1_5_
.285
_.1_0_5_
.095
_.0_5_4_
.046
_.0_2_6_
.019
_.1_9_0_
.170
Competitive C-106 Package
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet C106M1.PDF ] | |
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