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PDF 2N6394 Data sheet ( Hoja de datos )
| Número de pieza | 2N6394 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6394 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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2N6394-2N6399
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
(TJ = -40 to +125°C, sine wave, 50 to 60 Hz, gate open)
2N6394
2N6395
2N6397
2N6399
VRRM, VDRM
50
100 Volts
400
800
On state RMS current
(180° conduction angles, TC = 90°C)
IT(RMS)
12 Amps
Peak non-repetitive surge current
(1/2 cycle, 60Hz, sine wave, TJ = 90°C)
Circuit fusing considerations (t = 8.3ms)
ITSM 100 Amps
I2t 40 A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 90◌ۜ °C)
PGM 20 Watts
Forward average gate power (t = 8.3ms, TC = 90°C)
Forward peak gate current (pulse width ≤ 1.0µs, TC = 90◌ۜ °C)
PG(AV)
IGM
0.5 Watts
2 Amps
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Thermal resistance, junction to case
Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds
RӨJC
TL
2.0
260
ELECTRICAL CHARACTERISTICS (TC = 25°C)
Characteristic
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 100°C
ON CHARACTERISTICS
Peak forward on-state voltage (2)
(ITM = 24A peak)
Gate trigger current (continuous dc)
(VD = 12 Vdc, RL = 100 Ω)
Symbol
Min. Typ. Max.
IDRM or IRRM
VTM
IGT
- - 10
- - 2.0
- 1.7 2.2
- 5.0 30
Unit
°C/W
°C
Unit
µA
mA
Volts
mA
Rev. 20130117
1 page  
High-reliability discrete products
and engineering services since 1977
2N6394-2N6399
SILICON CONTROLLED RECTIFIERS
Rev. 20130117
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N6394.PDF ] | |
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