DataSheet.es    

PDF 2N6237 Datasheet ( Hoja de datos )

Número de pieza 2N6237
Descripción SILICON CONTROLLED RECTIFIERS
Fabricantes EX 
Logotipo EX Logotipo



Total 3 Páginas
		
2N6237 Hoja de datos, Descripción, Manual
2N6236-2N6241
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (TC = 110°C unless otherwise noted)
Rating
Symbol
Value
Unit
Repetitive peak forward and reverse blocking voltage (1)
(1/2 sine wave, RGK = 1000, TC = -40 to +110°C)
2N6236
2N6237
2N6238
2N6239
2N6240
2N6241
VDRM
VRRM
30
50
100
200
400
600
Volts
Non-repetitive peak reverse blocking voltage
(1/2 sine wave, RGK = 1000, TC = -40 to +110°C)
2N6236
2N6237
2N6238
2N6239
2N6240
2N6241
VRSM
50
100
150
250
450
650
Volts
Average on-state current
(TC = -40 to +90°C)
(TC = 100°C)
IT(AV)
2.6
1.6
Amps
Surge on-state current
(1/2 sine wave, 60Hz, TC = 90°C)
(1/2 sine wave, 1.5ms, TC = 90°C)
Circuit fusing (TC = -40 to +110°C, t = 8.3ms)
ITSM 25 Amps
35
I2t 2.6
A2s
Peak gate power (pulse width = 10µs, TC = 90°C)
PGM 0.5 Watts
Average gate power (t = 8.3ms, TC = 90°C)
PG(AV)
0.1
Watts
Peak forward gate current
IGM 0.2 Amps
Peak reverse gate voltage
Operating junction temperature range
VRGM
TJ
6
-40 to 110
Volts
°C
Storage temperature range
Tstg -40 to 150
°C
Stud torque
6 In. lb.
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested
with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
RӨJA
Max
3
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1000unless otherwise noted)
Characteristic
Symbol Min
Peak forward or reverse blocking current
(Rated VDRM or VRRM)
TC = 25°C
TC = 110°C
IDRM,
IRRM
-
-
Peak forward “on” voltage
(ITM = 8.2A peak, pulse width = 1 to 2ms, 2% duty cycle)
VTM -
Typ
-
-
-
Max
Unit
10 µA
200
Volts
2.2

1 page


PáginasTotal 3 Páginas
PDF Descargar[ 2N6237.PDF ]

Enlace url


Hoja de datos destacado

Número de piezaDescripciónFabricantes
2N6230Bipolar PNP Device in a Hermetically sealed TO3 Metal PackageSeme LAB
Seme LAB
2N6230(2N6229 - 2N6231) SILICON POWER TRANSISTORCentral Semiconductor
Central Semiconductor
2N6230(2N6229 - 2N6231) Silicon Power TransistorSavantIC
SavantIC
2N6230Trans GP BJT PNP 120V 15A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
New Jersey Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


www.DataSheet.es    |   2019   |  Privacy Policy  |  Contacto  |  Buscar