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PDF 2N6237 Datasheet ( Hoja de datos )

Número de pieza 2N6237
Descripción SILICON CONTROLLED RECTIFIERS
Fabricantes Digitron Semiconductors 
Logotipo Digitron Semiconductors Logotipo



Total 4 Páginas
		
2N6237 Hoja de datos, Descripción, Manual
2N6236-2N6241
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Repetitive peak forward and reverse blocking voltage (1)
(1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C)
2N6236
2N6237
2N6238
2N6239
2N6240
2N6241
VDRM
VRRM
30
50
100
200
400
600
Volts
Non-repetitive peak reverse blocking voltage
(1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C)
2N6236
2N6237
2N6238
2N6239
2N6240
2N6241
50
VRSM
100
150
250
450
650
Volts
Average on-state current
(TC = -40 to +90°C)
(TC = 100°C)
Surge on-state current
(1/2 sine wave, 60Hz, TC = 90°C)
(1/2 sine wave, 1.5ms, TC = 90°C)
Circuit fusing (TC = -40 to +110°C, t = 8.3ms)
Peak gate power (pulse width = 10µs, TC = 90°C)
Average gate power (t = 8.3ms, TC = 90°C)
IT(AV)
ITSM
I2t
PGM
PG(AV)
2.6
1.6
25
35
2.6
0.5
0.1
Amps
Amps
A2s
Watts
Watts
Peak forward gate current
IGM 0.2 Amps
Peak reverse gate voltage
VRGM
6
Volts
Operating junction temperature range
TJ -40 to 110
°C
Storage temperature range
Tstg -40 to 150
°C
Stud torque
6 In. lb.
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant
source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
RӨJA
Max
3
75
Unit
°C/W
°C/W
Rev. 20130128

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