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PDF 2N5165 Data sheet ( Hoja de datos )
| Número de pieza | 2N5165 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Digitron Semiconductors | |
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Hay una vista previa y un enlace de descarga de 2N5165 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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2N5164-2N5171
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)(2)
2N5164, 2N5168
2N5165, 2N5169
2N5166, 2N5170
2N5167, 2N5171
VRRM, VDRM
50
200 Volts
400
600
Non repetitive peak reverse blocking voltage
2N5164, 2N5168
2N5165, 2N5169
2N5166, 2N5170
2N5167, 2N5171
75
VRSM 300 Volts
500
700
Forward current RMS
IT(RMS)
20 Amps
Average on state current, TC = 67°C
Circuit fusing considerations, TJ = -40 to +100°C; t = 8.3ms
IT(AV)
13 Amps
I2t 235 A2s
Peak non-repetitive surge current (TJ = -40 to +100°C)
(1 cycle, 60Hz preceded and followed by rated current and voltage)
ITSM
240 Amps
Peak gate power (maximum pulse width = 10µs)
PGM 5 Watts
Average gate power
PG(AV)
0.5 Watts
Forward peak gate current (maximum pulse width = 10µs)
IGM 2 Amps
Peak gate voltage
VGM 10 Volts
Operating junction temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque (2N5168-2N5171)
- 30 In. lb.
Note 1: VDRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however,
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Note 2: Devices should not be operated with a positive bias applied to the gate concurrent with a negative potential applied to the anode.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typical
Maximum
Unit
Thermal resistance, junction to case
2N5164, 2N5165, 2N5166, 2N5167
2N5168, 2N5169, 2N5170, 2N5171
RӨJC 1 1.5 °C/W
1.1 1.6
Rev. 20150513
1 page  
High-reliability discrete products
and engineering services since 1977
2N5164-2N5171
SILICON CONTROLLED RECTIFIER
Rev. 20150513
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N5165.PDF ] | |
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