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PDF C103B Data sheet ( Hoja de datos )

Número de pieza C103B
Descripción SILICON CONTROLLED RECTIFIER
Fabricantes Central Semiconductor Corp　
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No Preview Available ! C103B Hoja de datos, Descripción, Manual

DATA SHEET
C103Y
C103YY
C103A
C103B
SILICON CONTROLLED RECTIFIER
0.8 AMP, 30 THRU 200 VOLTS
TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for
control systems and sensing circuit applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=60°C)
Peak One Cycle Surge
Peak Forward Gate Current
Peak Reverse Gate Voltage
Peak Gate Power Dissipation (tp=8.3ms)
Average Gate Power Dissipation
Storage Temperature
Junction Temperature
SYMBOL
VDRM, VRRM
IT(RMS)
ITSM
IGM
VGM
PGM
PG(AV)
Tstg
TJ
C103Y
30
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
IDRM, IRRM
IDRM, IRRM
IGT
IGT
IH
IH
VGT
VGT
VGT
VTM
dv/dt
TEST CONDITIONS
Rated VDRM, VRRM, RGK=1KΩ
Rated VDRM, VRRM, TC=125°C, RGK=1KΩ
VD=6.0V, RL=100Ω, RGK=1KΩ
VD=6.0V, RL=100Ω, RGK=1KΩ, TC=-65°C
RGK=1KΩ
RGK=1KΩ, TC=-65°C
VD=6.0V, RL=100Ω
VD=6.0V, RL=100Ω, TC=-65°C
VD=6.0V, RL=1KΩ, TC=125°C
ITM=1.0A
VD=VDRM, TC=125°C, RGK=1KΩ
C103YY
60
C103A
100
0.8
8.0
0.5
8.0
1.0
0.01
-65 to +150
-65 to +125
C103B
200
MIN TYP MAX
1.0
50
200
500
5.0
10
0.8
1.0
0.1
1.5
20
UNITS
V
A
A
A
V
W
W
°C
°C
UNITS
µA
µA
µA
µA
mA
mA
V
V
V
V
V/µs
(SEE REVERSE SIDE)
R0

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