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PDF 2N4169 Data sheet ( Hoja de datos )
| Número de pieza | 2N4169 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N4169 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2N4167-2N4174
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage
2N4167
2N4168
2N4169
2N4170
2N4172
2N4174
Forward current RMS
Peak forward surge current
(one cycle, 60Hz, TJ = -40 to +100°C)
Circuit fusing (t = 8.3ms)
Peak gate power
Average gate power
Peak gate current
Peak gate voltage
Operating temperature range
Storage temperature range
Stud torque
Symbol
VDRM, VRRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
VGM
TJ
Tstg
Value
25
50
100
200
400
600
8
100
40
5
0.5
2
10
-40 to +100
-40 to +150
15
Unit
V
A
A
A2s
W
W
A
V
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TC = 25°C
TC = 100°C
Gate trigger current (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = 7V, RL = 100Ω, TC = -40°C)
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = 7V, RL = 100Ω, TC = -40°C)
(VD = 7V, RL = 100Ω, TC = 100°C)
Forward “on” voltage (pulsed, 1ms max., duty cycle ≤ 1%)
(ITM = 15.7A)
Typ.
1.5
Symbol
IDRM, IRRM
IGT
VGT
VTM
Max Unit
2.5 °C/W
Min Typ Max Unit
- - 10
--2
- 10 30
- - 60
- 0.75 1.5
- - 2.5
0.2 -
-
- 1.4 2
µA
mA
mA
V
V
Rev. 20130108
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N4169.PDF ] | |
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