DataSheet.es    


PDF 2N3870 Data sheet ( Hoja de datos )

Número de pieza 2N3870
Descripción SILICON CONTROLLED RECTIFIER
Fabricantes Digitron Semiconductors 
Logotipo Digitron Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de 2N3870 (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! 2N3870 Hoja de datos, Descripción, Manual

High-reliability discrete products
and engineering services since 1977
2N3870-2N1850,
2N3896-2N3899,
2N6171-2N6174
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward or reverse blocking voltage (1)
(TJ = -40 to 100°C, ½ sine wave, 50-400 Hz, gate open)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
VRRM or VDRM
100
200
400
600
Volts
Peak non-repetitive forward or reverse blocking voltage (t ≤
5ms)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
VRSM or VDSM
150
330
660
700
Volts
Average on-state current (2)
(TC = -40 to 65°C)
(TC = 85°C)
Peak non-repetitive surge current
(one cycle, 60Hz) (TC = 65°C)
Circuit fusing
(TC = -40 to 100°C)
(t = 1 to 8.3 ms)
IT(AV) 22 Amps
11
ITSM 350 Amps
I2t 510 A2s
Peak gate power
Average gate power
Peak forward gate current
Peak gate voltage
Operating junction temperature range
Storage temperature range
Stud torque
PGM
PG(AV)
IGM
VGM
TJ
Tstg
-
20
0.5
2
10
-40 to 100
-40 to 150
30
Watts
Watt
Amps
Volts
°C
°C
In. lb.
Thermal resistance, junction to case
2N3870 – 2N3873, 2N3896-2N3899
2N6171-2N6174
RӨJC 0.9 °C/W
1
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be
tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 2: Isolated stud devices must be derated an additional 10 percent.
Rev. 20150306

1 page




2N3870 pdf
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
2N6171-2N6174
Case TO-48
Marking
Alpha-numeric
Polarity
Cathode
2N3870-2N1850,
2N3896-2N3899,
2N6171-2N6174
SILICON CONTROLLED RECTIFIER
TO-48 ISO
Inches
Millimeters
Min Max Min Max
A 0.551 0.559 14.000 14.200
B 0.501 0.505 12.730 12.830
C - 1.280 - 32.510
F - 0.160 - 4.060
H - 0.265 - 6.730
J 0.420 0.455 10.670 11.560
K 0.300 0.350 7.620 8.890
L 0.255 0.275 6.480 6.990
Q 0.055 0.085 1.400 2.160
T 0.135 0.150 3.430 3.810
Rev. 20150306

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet 2N3870.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2N3870SILICON CONTROLLED RECTIFIERSNew Jersey Semi-Conductor
New Jersey Semi-Conductor
2N387035A Silicon Controlled RectifierSolid State
Solid State
2N3870(2N38xx) Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)Motorola Semiconductors
Motorola Semiconductors
2N3870SILICON CONTROLLED RECTIFIERDigitron Semiconductors
Digitron Semiconductors

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar