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PDF 2N5240 Data sheet ( Hoja de datos )
| Número de pieza | 2N5240 | |
| Descripción | NPN Power Silicon Transistor | |
| Fabricantes | MA-COM | |
| Logotipo |  |
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2N5240
NPN Power Silicon Transistor
Features
High Voltage: VCEO(SUS) = 300 V min.
Wide Area of Safe Operation
Designed for use in series regulators, power
amplifiers, inverters, deflection circuits, switching
regulators, and high voltage bridge amplifiers.
TO-3 (TO-204AA) Package
Rev. V1
Electrical Characteristics
Parameter
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Forward Bias, Second Breakdown
Collector Current
AC Forward Current Transfer Ratio
DC Current Gain
DC Current Gain
DC Current Gain
Current-Gain - Bandwidth Product
Output Capacitance
Test Conditions
Symbol Units
lC = 0.2 A; IB = 0
VCEO(SUS)
V
lC = 0.2 A; RBE ≤50 Ω
lE = 0.02 A; lC = 0
lC = 2 A; IB = 0.25 A
VCEO(SUS)
V(BR)EBO
VCE(SAT)-1
V
V
V
lC = 4.5 A; IB = 1.125 A
lC = 2 A; VCE = 10 V
VBE = 375 V; VBE = -1.5 V
VBE = 300 V; VBE = -1.5 V; TC = 150°C
VBE = 200 V; IB = 0
VBE = 6 V; lC = 0
tp=1 sec, VCE =100 Vdc
VCE(SAT)-2
VBE(on)
lCEV
ICEO
lESO
IS/B
V
V
mA
mA
mA
A
F = 1 KHz; VCE = 10 Vdc, lC = 0.4 A
lC = 0.4 A; VCE = 10 V
lC = 2 A; VCE = 10 V
hfe
hFe-1
hFe-2
lC = 4.5 A; VCE = 10 V
lC = 0.2 A; VCE = 10 V
lE = 0; VCB = 10 V; ftest = 1.0 MHz
hFe-3
fT
COB
MHz
pF
Min.
300
350
6
--
--
--
--
--
--
--
0.8
20
20
20
5
2
--
Max.
--
--
--
2.5
5.0
3.0
2
3
2
5
--
--
80
80
--
--
250
1
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2N5240.PDF ] | |
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