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PDF VS-2N5205 Data sheet ( Hoja de datos )
| Número de pieza | VS-2N5205 | |
| Descripción | Phase Control Thyristor RMS SCR | |
| Fabricantes | Vishay | |
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VS-2N681, VS-2N5205 Series
Vishay Semiconductors
Phase Control Thyristor RMS SCRs, 25 A, 35 A
TO-208AA (TO-48)
PRODUCT SUMMARY
IT(AV)
IT(RMS)
VDRM/VRRM
VTM
IGT
TJ
Package
Diode variation
16 A, 22 A
25 A, 35 A
25 V to 1200 V
2.3 V
60 mA
-40 °C to 125 °C
TO-208AA (TO-48)
Single SCR
FEATURES
• General purpose stud mounted
• Broad forward and reverse voltage range -
through 1200 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
2N681-92
IT(AV)
IT(RMS)
ITSM
TC
50 Hz
60 Hz
16 (1)
-65 to +65 (1)
25
145
150 (1)
50 Hz
I2t
60 Hz
103
94
IGT
dV/dt
40
-
dI/dt
75 to 100
VDRM
Range
VRRM
Range
TJ
Note
(1) JEDEC® registered value
25 to 800
25 to 800
-65 to +125 (1)
2N5205-07
22 (1)
-40 to +40
35
285
300 (1)
410
375
40
100 (1)
100
600 to 1200
600 to 1200
-40 to +125 (1)
UNITS
A
°C
A
A
A2s
mA
V/μs
A/μs
V
V
°C
Revision: 19-Nov-15
1 Document Number: 93706
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-2N681, VS-2N5205 Series
Vishay Semiconductors
70
TJ = 125 °C
60
Sinusoidal
Current
Waveform
50
Controlled
40 Rectifier
Turned
30 Fully On
+60° +120°
+30° +90° +180°
DC
20
Ø
10 Conduction Angle
0
0 4 8 12 16 20 24 28 32 36
Average On-State Current Over Full Cycle (A)
Fig. 3 - Maximum Low Level On-State Power Loss vs.
Current (Sinusoidal Current Waveform),
2N681 Series
104
4
TJ = 125 °C
DC
Sinusoidal Current Waveform +180°
103
Controlled Rectifier
Turned Fully On
+120°
+90°
4 +60°
+30°
102
4
10
4
1.0
1.0
4 10
Ø
Conduction Angle
4 102
4 103
Average On-State Current Over Full Cycle (A)
Fig. 4 - Maximum High Level On-State Power Loss vs. Current
(Sinusoidal Current Waveform),
2N681 Series
10
9
8
7
6
5
4
3
2
1
0
0
Maximum Allowable
Instantaneous Gate
Power Dissipation
5.0 W
Area of Certain Triggering
Area of All Possible
Triggering Points
0.2 0.4 0.6 0.8 1.0
Instantaneous Gate Current (A)
Fig. 5 - Gate Characteristics,
2N681 Series
1.2
3
-65 °C
2
25 °C
1
125 °C
VGD (Max.) = 0.25 V
0
0 25 50 75 100 125
Gate Current (mA)
Fig. 5a - Area of All Possible Triggering Points vs. Temperature,
2N681 Series
10-1
101
4
4 1.0
4 10
4 102
Free Convection
Forced Convection at 1000 LFM
4 103
4 104
1.0
Mounted on Infinite Heatsink
4 and 4" x 4" x 1/16" Copper Fin
Infinite Heatsink
1.0
4
Long Time Durations
10-1
10-1
44
Short Time Durations
10-2
10-6
4 10-5
4 10-4
4 10-3
4 10-2
10-2
4 10-1
t - Square Wave Pulse Duration (s)
Fig. 6 - Maximum Transient Thermal Impedance, Junction to Case, vs. Pulse Duration,
2N681 Series
Revision: 19-Nov-15
5 Document Number: 93706
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet VS-2N5205.PDF ] | |
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