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PDF 2N4851 Data sheet ( Hoja de datos )

Número de pieza 2N4851
Descripción PN UNIJUNCTION TRANSISTOR
Fabricantes Digitron Semiconductors 
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No Preview Available ! 2N4851 Hoja de datos, Descripción, Manual

2N4851-2N4853
High-reliability discrete products
and engineering services since 1977
PN UNIJUNCTION TRANSISTOR
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
RMS power dissipation
RMS emitter current
Peak-pulse emitter current
Emitter reverse voltage
Interbase voltage
Operating junction temperature range
Storage temperature range
Symbol
PD
Ie
ie
VB2E
VB2B1
TJ
Tstg
Value
300
50
1.5
30
35
-65 to +125
-65 to +200
Unit
mW
mA
Amp
Volts
Volts
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Rating
Part number
Symbol
Min
Typ
Max Unit
Intrinsic standoff ratio
(VB2B1 = 10 V)
2N4851
2N4852, 2N4853
η 0.56 - 0.75 -
0.70 - 0.85
Interbase resistance
(VB2B1 = 3 V, IE = 0)
RBB 4.7 - 9.1 kΩ
Emitter reverse current
(VB2E = 30 V)
2N4851, 2N4852
2N4853
IEB2O
-
-
-
-
100 nA
50
Peak point emitter current
(VB2B1 = 25 V)
2N4851, 2N4852
IP
-
-
2 µA
2N4853
- - 0.4
Valley point current
(VB2B1 = 20 V, RB2 = 100Ω)
2N4851
2N4852
2N4853
IV
2.0
4.0
-
-
6.0 -
-
-
mA
-
Base one peak pulse voltage
(V1 = 20V)
2N4851
2N4852
2N4853
3.0
VOB1
5.0
6.0
-
-
-
-
- Volts
-
Maximum frequency of oscillation
f(max) - 0.25 - MHz
Rev. 20150306

1 page




2N4851 pdf
High-reliability discrete products
and engineering services since 1977
2N4851-2N4853
PN UNIJUNCTION TRANSISTOR
Rev. 20150306

5 Page










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