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PDF 2N2646 Data sheet ( Hoja de datos )
| Número de pieza | 2N2646 | |
| Descripción | SILICON UNIJUNCTION TRANSISTOR | |
| Fabricantes | Digitron Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N2646 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2N2646, 2N2647
High-reliability discrete products
and engineering services since 1977
SILICON UNIJUNCTION TRANSISTOR
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power dissipation(1)
PD 300 mW
RMS emitter current
IE(EMS)
50
mA
Peak pulse emitter current (2)
IE 2 Amps
Emitter reverse voltage
VB2E 30 Volts
Interbase voltage
VB2B1
35 Volts
Operating junction temperature range
TJ
-65 to 125
°C
Storage temperature range
Tstg -65 to 150 °C
Note 1: Derate 3mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry.
Note 2: Capacitor discharge – 10µF or less, 30 volts or less.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min Typ Max Unit
Intrinsic standoff ration
(VB2B1 = 10V) (1)
2N2646
2N2647
Interbase resistance
(VB2B1 = 3V, IE = 0)
Interbase resistance temperature coefficient
(VB2B1 = 3V, IE = 0, TA = -55° to 125°C)
Emitter saturation voltage
(VB2B1 = 10V, IE = 50mA)(2)
Modulated interbase current
(VB2B1 = 10V, IE = 50mA)
Emitter reverse current
(VB2E = 30V, IB1 = 0)
2N2646
2N2647
η
rBB
αrBB
VEB1(sat)
IB2(mod)
IEB2O
0.56 - 0.75 -
0.68 - 0.82
4.7 7 9.1 kohms
0.1 - 0.9 %/°C
- 3.5 - Volts
- 15 - mA
-
0.005
12
µA
-
0.005
0.2
Peak point emitter current
(VB2B1 = 25V)
2N2646
2N2647
IP
- 1 5 µA
- 12
Valley point current
(VB2B1 = 20V, RB2 = 100ohms)(2)
2N2646
2N2647
IV
4 6 - mA
8 10 18
Base-one peak pulse voltage(3)
2N2646
2N2647
VOB1
3 5 - volts
67 -
Note 1: Intrinsic standoff voltage: η = VP-VF/VB2B1, where VP = peak point emitter voltage , VB2B1 = interbase voltage, VF = emitter to base one
junction diode drop
(≈ 0.45V @ 10µA).
Note 2: PW ≈ 300µs, duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings
Note 3: Base one peak pulse voltage is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of pulse
circuits.
Rev. 20150306
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N2646.PDF ] | |
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