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PDF 2N2646 Data sheet ( Hoja de datos )
| Número de pieza | 2N2646 | |
| Descripción | Unijunction Transistor | |
| Fabricantes | NTE | |
| Logotipo |  |
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2N2646
Unijunction Transistor
TO−18 Package
Description:
The 2N2646 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger cir-
cuits.
Features:
D Low Peak Point Current: 5A (Max)
D Low Emitter Reverse Current: .005A (Typ)
D Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
RMS Emitter Current, IE(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Pulse Emitter Current (Note 2), iE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage, VB2E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage, VB2B1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to 125C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Note 1 Derate 3mW/C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base−Two) must be limited by the external circuitry.
Note 2 Capacitor discharge − 10F or less, 30 volts or less
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Intrinsic Standoff Ratio
VB2B1 = 10V, Note 3
Interbase Resistance
rBB VB2B1 = 3V, IE = 0
Interbase Resistance Temperature
Coefficient
arBB
Min Typ Max Unit
0.56 − 0.75 −
4.7 7.0 9.1 k
0.1 − 0.9 %/C
Note 3. Intrinsic standoff ratio, is defined by equation:
= VP − VF
VB2B1
where
VVVPBF2==B1EP=meaIitnktetePrrotboianBst eEasmVeoi−tlttOeargnVeeoJltuangcetion Diode Drop ( 0.45V @ 10A)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N2646.PDF ] | |
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