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PDF 2N1671A Data sheet ( Hoja de datos )

Número de pieza 2N1671A
Descripción UNIJUNCTION TRANSISTORS
Fabricantes Digitron Semiconductors 
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No Preview Available ! 2N1671A Hoja de datos, Descripción, Manual

2N1671(A-C)
High-reliability discrete products
and engineering services since 1977
UNIJUNCTION TRANSISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Base 1 – emitter reverse voltage
Base 2 – emitter reverse voltage
Interbase voltage
RMS emitter current
Emitter peak current
Total power dissipation
Maximum junction temperature
Storage temperature range
Symbol
VB1E
VB2E
VB1B2
IFRMS
IEM
Ptot
TJ
Tstg
Value
30
30
35
50
2
450
150
-55 to 150
Unit
V
V
V
mA
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Emitter reverse current
2N1671
IEB2O
VB2E = 30V, IB1 = 0
2N1671A
2N1671B
Emitter saturation voltage
2N1671
VEB1(sat)
VB2B1 = 10V, IE = 50mA 2N1671A
2N1671B
Interbase resistance
2N1671
RBBO
VB2B1 = 3V, IE = 0
2N1671A
2N1671B
Intrinsic standoff ratio
2N1671
η
VB2B1 = 10V
2N1671A
2N1671B
Valley current
2N1671
IV VB2B1 = 10V, RB2 = 100□ 2N1671A
2N1671B
Peak current
2N1671
IP
VB2B1 = 25V
2N1671A
2N1671B
Min Typ Max
- - -12
- - -12
- - -0.2
- -5
- -5
- -5
4.7 - 9.1
4.7 - 9.1
4.7 - 9.1
0.47 - 0.62
0.47 - 0.62
0.47 - 0.62
- -8
- -8
- -8
- - 25
- - 25
- -6
Unit
µA
V
K□
-
mA
µA
Rev. 20150708

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