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PDF DF5G6M4N Data sheet ( Hoja de datos )

Número de pieza DF5G6M4N
Descripción ESD Protection Diodes
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! DF5G6M4N Hoja de datos, Descripción, Manual

ESD Protection Diodes Silicon Epitaxial Planar
DF5G6M4N
DF5G6M4N
1. General
The DF5G6M4N is a TVS diode (ESD protection diode) protects
semiconductor devices used in mobile device interfaces and other
applications to protect against static electricity and noise.
Utilizing snapback characteristics, the DF5G6M4N provides low dynamic
resistance and superior protective performance. Furthermore, the
DF5G6M4N is a multibit device with a flow-through type design that is
easy for board layout and mounting.
2. Applications
Mobile Equipment
Smartphones
Tablets
Notebook PCs
Desktop PCs
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
3. Features
(1) Suitable for use with a 5.0 V signal line. (VRWM 5.5 V)
(2) Protects devices with its high ESD performance.
(VESD = ±20 kV (Contact / Air) @IEC61000-4-2)
(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(RDYN = 0.8 (typ.))
(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(VC = 10 V@IPP = 2 A (typ.))
(5) The DF5G6M4N is a multibit device with a flow-through type.
DFN5: 1.3 × 0.8 mm size
4. Example of Circuit Diagram
©2017 Toshiba Corporation
1
Start of commercial production
2017-03
2017-03-16
Rev.1.0

1 page




DF5G6M4N pdf
9. Packaging and Internal Circuit
DFN5
10. Equivalent Circuit (Top view)
11. Marking (Top view)
12. Land Pattern Dimensions (for reference only)
DF5G6M4N
1: I/O
2: GND
3: I/O
4: I/O
5: I/O
©2017 Toshiba Corporation
Unit: mm
5
2017-03-16
Rev.1.0

5 Page










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