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PDF BFY50 Data sheet ( Hoja de datos )

Número de pieza BFY50
Descripción GENERAL PURPOSE TRANSISTOR
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @Ta = 25°C
Derate above 25°C
Total Device Dissipation (5>Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj, T st g
Symbol
B«JC
RflJA
BFY BFY BFY
50 51 52
35 30 20
80 60 40
6
1
0.8
4.6
5
28.6
-65 to +200
Max
16.5
89.5
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 10 mA)
BFY50
BFY51
BFY52
Collector-Base Breakdown Voltage
0C = 10 uA)
BFY50
BFY51
BFY52
Emitter-Base Breakdown Voltage
(IE = 10 l*A)
Collector Cutoff Current
(VCB = 60 V)
(VCB = 40 V)
(VCB = 30 V)
Collector Cutoff Current
(VCB = 60 V, T 100°C)
(VCB = 40 V, T = 100°C)
(VCB = 30 V, T = 100°C)
Emitter Cutoff Current
(V£B = 5 V)
(VEB = 5 V, Tj = 100°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VcE = 6 V)
C(l = 150 mA, VcE = 6 V)
BFY50
BFY51
BFY52
BFY50
BFY51
BFY52
BFY50
BFY51-52
BFY50
BFY51
BFY52
(IC = 1 A, V C E = 6 V)
Collector-Emitter Saturation Voltage
(lC = 150 mA, Ib = 15 mA(1)
(lC = 1 A, Ib = 100 mA(1)
BFY50
BFY51 -52
BFY50
BFY51-52
Emitter-Base Saturation Voltage
(IC =--1 A, Ib = 100 mA(1)
(1) Pulsed: Pulse Duration -- 300 us. Duty Cycle =1%.
BFY50
BFY51
BFY52
CASE 79, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
Refer to 2N3019 for graphs.
Symbol
Min
|
Max
|
Unit
||
V(BR)CE0
V(BR)CBO
V(BR)EBO
35
30
20
80
60
40
ICBO
uA
2.5
hFE
VCE(sat)
20
30
30
40
60
15
VBE(sat)
50
2.8
0.2
0.35
1
1.6
nA
uA
4-229

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