|
|
PDF BFX48 Data sheet ( Hoja de datos )
| Número de pieza | BFX48 | |
| Descripción | SWITCHING TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BFX48 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
|
No Preview Available !
T
BFX48
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
PNP SILICON
Refer to 2N869A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation g Ta = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
"C
PD
Total Device Dissipation -i) Tq = 25°C
Tc = 100°C
Derate above 25°C
pd
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
' Tj, st g
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R.jc
Rnja
Value
30
30
5
0.1
0.36
2.06
1.2
0.686
6.86
-65 to +200
Max
146
486
Unit
Vdc
Vdc
Vdc
Amp
Watt
mW/°C
Watt
mW/°C
°C
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
|
Collector-Emitter Breakdown Voltage
(jC = 10 mA)(1)
Collector-Base Breakdown Voltage
(IC = 10 l-tA)
Emitter-Base Breakdown Voltage
(lE=10_nA)
Collector Cutoff Current
(V C E = 20 V)
(VCE = 20 V, TA = 125°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 uA, VCE = 1 V)
dC = 100 uA, VCE = 1 V)
(IC = 10 mA, Vce = 1 V)
(IC = 50 rnA, Vqe = 1 V)
dC = 10 mA, Vqf = 1 V, Ta
-55°C)
Collector-Emitter Saturation Voltage
dC = 1 mA, B| = 0.1 mA)
dC = 10 mA, Ib = 1 mA)
(IC = 50 mA, Ib = 5 mA)(1)
Emitter-Base Saturation Voltage
dC = 1 mA, Bl = 0.1 mA)
dc = 10 mA, Ib = 1 mA)
(IC = 50 mA, Ib = 5 mA)(1)
SMALL SIGNAL CHARACTERISTICS
—Current Gain Bandwidth Product
"C = 10 mA, Vce = 20 V, f = 100 MHz)
Output Capacitance
(VCB = 1 V)
Input Capacitance
(VEB = 0.5 V)
Noise Figure
dc = 1 mA, VC e = 20 V, f
100 MHz)
Turn On Time
dc = 50 mA, IB1 5 mA)
Turn Off Time
(IC = 50 mA, lB1 = lB2 = 5 mA)
Collector-Base Time Constant
dC = 10 mA, Vce = 20 V, f = 80 MHz)
(1) Pulsed: Pulse Duration = 300 [is. Duty Cycle = 1%.
Symbol
|
V(BR)CEO
V(BR)CB0
V(BR)EB0
ices
hFE
v CE(sat)
VBE(sat)
n
Cob
Cib
NF
toff
rb'Cc
Min
30
40
70
90
20
30
15
15
0.13
0.14
0.3
0.75
0.9
1.1
3.5
5.5
160
40
Unit
nA
uA
MHz
pF
pF
ps
4-226
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BFX48.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFX40 | HIGH CURRENT TRANSISTOR | Motorola Semiconductors |
| BFX40 | PNP SILICON EPITAXIAL TRANSISTOR |  Seme LAB |
| BFX40 | (BFXxx) Medium Power Amplifiers |  Micro Electronics |
| BFX40 | Trans GP BJT PNP 75V 1A 3-Pin TO-39 |  New Jersey Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |