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PDF BFS17S Data sheet ( Hoja de datos )
| Número de pieza | BFS17S | |
| Descripción | RF TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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BFS17,S
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
vCEO
vCBO
THERMAL CHARACTERISTICS
Characteristic
•Total Device Dissipation, T/\ = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
Tstg
Thermal Resistance Junction to Ambient
R 0JA
mm•Package mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
OC = 10 mA)
Collector-Base Breakdown Voltage
OC = 100 ^A)
Collector Cutoff Current
(VC E = 10 V)
Collector Cutoff Current
(VC B = 15 V)
Emitter Cutoff Current
(VEB = 1.0 V)
ON CHARACTERISTICS
DC Current Gain
dC = 2.0 mA, VCE = 1.0 V)
dC = 2.0 mA, VC e = 1.0 V)
dC = 25 mA, Vqe = 1.0 V)
BFS17
BFS17S
Collector-Emitter Saturation Voltage
dC = 10 mA, Ib = 1.0 mA)
Base-Emitter Saturation Voltage
OC = 1 ° mA, Ib = 1.0 mA)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 2.0 mA, VCE = 5.0 V, f = 500 MHz)
dp = 25 mA, VCE = 5.0 V, f = 500 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Noise Figure
dC = 2.0 mA, VCE
5.0 V, Rs = 50 O, f = 30 MHz)
BFS17S
Symbol
v(BR)CEO
v(BR)CBO
!CEO
!CBO
'EBO
"FE
v CE(sat)
v BE(sat)
C bo
NF
Min
20
50
20
1.0
1.3
Value
15
25
Max
350
2.8
150
357
Max
25
10
150
150
0.4
1.0
1.5
5.0
Unit
Vdc
Vdc
Unit
mW
mW/°C
°C
°C/W
Unit
Vdc
Vdc
nA
GHz
PF
dB
3-36
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BFS17S.PDF ] | |
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