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PDF 2N4416 Data sheet ( Hoja de datos )

Número de pieza 2N4416
Descripción N-Channel JFETs
Fabricantes Vishay 
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2N4416/2N4416A/SST4416
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4416
2N4416A
SST4416
VGS(off) (V)
v6
2.5 to 6
v6
V(BR)GSS Min (V)
30
35
30
gfs Min (mS)
4.5
4.5
4.5
IDSS Min (mA)
5
5
5
FEATURES
D Excellent High-Frequency Gain:
2N4416/A, Gps 13 dB (typ) @
400 MHz
D Very Low Noise: 3 dB (typ) @
400 MHz
D Very Low Distortion
D High AC/DC Switch Off-Isolation
BENEFITS
D Wideband High Gain
D Very High System Sensitivity
D High Quality of Amplification
D High-Speed Switching Capability
D High Low-Level Signal Amplification
APPLICATIONS
D High-Frequency Amplifier/Mixer
D Oscillator
D Sample-and-Hold
D Very Low Capacitance Switches
DESCRIPTION
The 2N4416/2N4416A/SST4416 n-channel JFETs are
designed to provide high-performance amplification at high
frequencies.
The TO-206AF (TO-72) hermetically-sealed package is
available with full military processing (see Military
Information.) The TO-236 (SOT-23) package provides a
low-cost option and is available with tape-and-reel options
(see Packaging Information). For similar products in the
TO-226AA (TO-92) package, see the J304/305 data sheet.
TO-206AF
(TO-72)
S
1
C
4
2
D
3
Top View
2N4416
2N4416A
G
For applications information see AN104.
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
TO-236
(SOT-23)
D1
S2
3G
Top View
SST4416 (H1)*
*Marking Code for TO-236
www.vishay.com
1

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2N4416 pdf
2N4416/2N4416A/SST4416
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current
300
TA = 25_C
240
VGS(off) = 2 V
180
3 V
120
60
0
0.1
ID Drain C1urrent (mA)
10
Common-Source Input Capacitance
vs. Gate-Source Voltage
5
f = 1 MHz
4
3
VDS = 0 V
2
10 V
1
0
0 4 8 12 16 20
VGS Gate-Source Voltage (V)
Input Admittance
100
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bis
10
gis
1
Circuit Voltage Gain vs. Drain Current
100
80
AV
+
1
gfs RL
) RLgos
Assume VDD = 15 V, VDS = 5 V
10 V
60 RL + ID
40 VGS(off) = 2 V
20
3 V
0
0.1
ID Drain C1urrent (mA)
10
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
3
f = 1 MHz
2.4
1.8
1.2 VDS = 0 V
10 V
0.6
0
0 4 8 12 16
VGS Gate-Source Voltage (V)
Forward Admittance
100
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
10
gfs
bfs
1
20
0.1
100
200 500
f Frequency (MHz)
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
1000
0.1
100
200 500
f Frequency (MHz)
1000
www.vishay.com
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