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PDF 1N4150 Data sheet ( Hoja de datos )
| Número de pieza | 1N4150 | |
| Descripción | 500mW 75 Volt Silicon Epitaxial Diode | |
| Fabricantes | MCC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N4150 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
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1N4150
Features
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
• Low Current Leakage
• Compression Bond Construction
• Low Cost
• Marking : Cathode band and type number
• Moisture Sensitivity Level 1
500mW 75 Volt Silicon
Epitaxial Diode
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 300°C/W Junction To Ambient
DO-35
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
VR 50V
Breakdown Voltage
Average Rectified
Current
Power Dissipation
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
BV
IO
PTOT
IFSM
VF
75V IR=5.0μA
200mA
500mW
1.0A
4.0A
Pulse Width=1.0S
Pulse Width=1.0µS
1.0V
IFM = 100mA;
TJ = 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
100nA
100µA
VR=50Volts
TJ = 25°C
TJ = 150°C
Maximum Junction
Capacitance
CJ
2.5pF
Measured at 1.0MHz,
VR=0
Maximum Reverse
Recovery Time
IF=10mA
Trr 4.0nS VR=6.0V
RL=100Ω
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM MIN MAX
A --- .166
B --- .079
C --- .020
D 1.000 ---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE
Revision: A
www.mccsemi.com
1 of 2
2011/01/01
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N4150.PDF ] | |
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