(PDF) FJT1101 Datasheet - ULTRA LOW LEAKAGE DIODES

Número de pieza	FJT1101
Descripción	ULTRA LOW LEAKAGE DIODES
Fabricantes	Digitron Semiconductors
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No Preview Available ! High-reliability discrete products and engineering services since 1977 FJT1100, FJT1101 ULTRA LOW LEAKAGE DIODES FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Storage temperature range Maximum junction operating temperature Lead temperature Power dissipation Maximum total power dissipation at 25°C ambient Linear power derating factor (from 25°C) Working inverse voltage FJT1100 FJT1101 Continuous forward current -55° to +200°C +175°C +260°C 250 mW 1.67 mW/°C 25V 15V 150 mA Value ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Characteristics Min Max Units Test Conditions BV Breakdown voltage FJT1100 FJT1101 30 20 V IR = 5.0µA FJT1100 IR Reverse current FJT1101 1.0 10 5.0 pA 15 VR = 5.0V VR = 15V VR = 5.0V VR = 15V VF Forward voltage FJT1100 FJT1101 1.05 1.10 V IF = 50mA C Capacitance FJT1100 FJT1101 1.5 1.8 pF VR = 0, f = 1MHz Rev. 20150306 1 page

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PDF FJT1101 Data sheet ( Hoja de datos )