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PDF BFQ19 Data sheet ( Hoja de datos )
| Número de pieza | BFQ19 | |
| Descripción | RF TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BFQ19 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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BFQ19
CASE 345-01, STYLE 1
SOT-89
RF TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Max (f > 1.0 MHz)
—Collector Current Average
Operating and Storage Junction
Temperature Range
Symbol
vCEO
VCBO
vEBO
'CM
ICAV
TJ- Tstg
Value
15
20
3.0
150
75
-55 to +150
Unit
V
V
V
mA
mA
°C
THERMAL CHARACTERISTICS
Characteristic
*Total Device Dissipation, T^ = 25°C
Derate above 25°C
Symbol
PD
Storage Temperature
T stg
"Thermal Resistance Junction to Ambient
R 0JA
"Package mounted on 99.5% alumina 10 x 12 x 0.6 mm.
Max
1.0
8.0
150
125
Unit
Watt
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
r Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
dC = 10 mA)
Collector-Base Breakdown Voltage
dC = 10 ^A)
Emitter-Base Breakdown Voltage
=E(l 10 fjA)
Collector Cutoff Current
(VCB = 10 V)
Emitter Cutoff Current
(VEB = 1.0 V)
ON CHARACTERISTICS
DC Current Gain
dC = 50 mA, Vce = 10 V)
dC = 75 mA, VCE = 10 V)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 50 mA, Vqe = 10 V, f = 500 MHz)
Op = 75 mA, VCE = 10 V, f = 500 MHz)
Collector-Base Capacitance
(VCB = 10V,f = 1.0 MHz)
Capacitance Emitter-to-Base
(Vjb = 0.5 V, f = 1.0 MHz)
Reverse Transfer Capacitance Common Emitter
(VCE = IQV.IC = 10 mA, f = 1.0 MHz)
Noise Figure
dp = 50 mA, Vqe
10 V, f = 500 MHz)
Symbol
v (BR)CEO
v (BR)CBO
v (BR)EBO
!CBO
'EBO
Min
3.0
hFE
h
Ccb
Ceb
25
25
4.0
4.4
Max
Unit
100
100 nA
GHz
PF
5.0 pF
1.3 PF
3-32
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BFQ19.PDF ] | |
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